UTC-IC 6N60Z

UNISONIC TECHNOLOGIES CO., LTD
6N60Z
Preliminary
Power MOSFET
6.2A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 6N60Z is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
„
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N60ZL-TF3-T
6N60ZG-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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6N60Z
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6.2
A
Continuous Drain Current
ID
6.2
A
Pulsed Drain Current (Note 2)
IDM
24.8
A
440
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
PD
40
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATING
62.5
3.2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
Forward
VGS = 20V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
1.0
DYNAMIC CHARACTERISTICS
770
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
95
f=1.0 MHz
Reverse Transfer Capacitance
CRSS
10
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
20
Turn-On Rise Time
tR
70
VDD=300V, ID =6.2A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
40
Turn-Off Fall Time
tF
45
20
Total Gate Charge
QG
VDS=480V, ID=6.2A,
Gate-Source Charge
QGS
4.9
VGS=10 V (Note 1, 2)
Gate-Drain Charge
QGD
9.4
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
5
-5
V
μA
μA
μA
V/°C
4.0
1.5
V
Ω
1000
120
13
pF
pF
pF
50
150
90
100
25
ns
ns
ns
ns
nC
nC
nC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6.2 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 6.2 A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
290
2.35
1.4
V
6.2
A
24.8
A
ns
μC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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