UNISONIC TECHNOLOGIES CO., LTD 6N70 Preliminary Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(ON)=1.6Ω @ VGS=10V, ID=3A * Low gate charge (Typically 51nC) * Low CRSS (Typically 45pF) * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N70L-TF3-T 6N70G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-710.a 6N70 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage (Note 2) RATINGS UNIT 700 V ±30 V 6 A TC=25°C ID Continuous Drain Current TC=100°C 3.8 A Pulsed IDM 24 A Avalanche Current (Note 2) IAR 6 A 582 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns Power Dissipation 130 W PD Linear Derarting Factor 1.04 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 0.96 UNIT °C/W °C/W 2 of 6 QW-R502-710.a 6N70 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA VDS=700V Drain-Source Leakage Current IDSS VDS=560V, TC=125°C VGS=+30V, VDS=0V Forward Gate-Source IGSS Leakage Current Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA, VDS=5V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz (Note 1, 2) Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=560V, Gate to Source Charge QGS ID=6A (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=350V, ID=6A, RG=11.5Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse pn-diode in Maximum Body-Diode Pulsed Current the MOSFET ISM (Note 3) Drain-Source Diode Forward Voltage VSD IS=6A, VGS=0V, TJ = 25°C (Note 2) Body Diode Reverse Recovery Time trr IF=6A, dIF/dt=100A/µs, TJ = 25°C Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 0.79 2.0 V V/°C 25 µA 250 µA +100 nA -100 nA 1.6 4.0 1.8 V Ω 920 100 45 1200 115 55 pF pF pF 51 8.3 23.1 18 23 76 26 67 45 55 160 60 nC nC nC ns ns ns ns 6 A 24 A 1.4 V 440 4.05 ns µC 3 of 6 QW-R502-710.a 6N70 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Same Type as DUT 12V 200nF 50kΩ VDS 300nF VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveforms VDS RG 90% RD VDS VGS 10V 10% DUT VGS td(ON) tR td(OFF) tF tON Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG tOFF BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-710.a 6N70 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-710.a 6N70 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-710.a