UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies. 1 TO-220F 1 TO-220F1 FEATURES * RDS(ON) = 2.3Ω @VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N90L-TA3-T 6N90G-TA3-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TF1-T 6N90G-TF1-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 5 QW-R502-492.C 6N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V ID 6.2 A Continuous (TC=25°C) Drain Current Pulsed (Note 2) IDM 24 A Single Pulsed (Note 3) EAS 650 mJ Avalanche Energy Repetitive (Note 2) EAR 16.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 167 W Power Dissipation PD TO-220F/TO220F1 56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F/TO220F1 SYMBOL θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.75 2.25 UNIT °C/W °C/W °C/W 2 of 5 QW-R502-492.C 6N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 900 Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA 1.07 VDS=900V, VGS=0V 10 Drain-Source Leakage Current IDSS VDS=720V, TC=125°C 100 Forward VGS=+30V, VDS=0V +100 Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V -100 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.85 2.3 Forward Transconductance gFS VDS=50V, ID=3.1A (Note 1) 5.5 DYNAMIC PARAMETERS Input Capacitance CISS 1360 1770 Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 110 145 Reverse Transfer Capacitance CRSS 11 15 SWITCHING PARAMETERS 30 40 Total Gate Charge QG VGS=10V, VDS=720V, ID=6.2A Gate to Source Charge QGS 9.0 (Note 1, 2) Gate to Drain Charge QGD 12 Turn-ON Delay Time tD(ON) 35 80 Rise Time tR 90 190 VDD=450V, ID=6.2A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 55 120 Fall-Time tF 60 130 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 6.0 Maximum Body-Diode Pulsed Current ISM 24 Drain-Source Diode Forward Voltage VSD IS=6.2A, VGS=0V 1.4 630 Body Diode Reverse Recovery Time tRR IS=6.2A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR 6.9 Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V V/°C µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC 3 of 5 QW-R502-492.C 6N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-492.C 6N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-492.C