UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 1.6Ω @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Lead Free Halogen Free 7N70L-TF3-T 7N70G-TF3-T 7N70L-TF1-T 7N70G-TF1-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 7 QW-R502-103,C 7N70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 700 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 2) IDM 28 A Avalanche Energy, Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F 142 W Power Dissipation (TC = 25°C) PD TO-220F1 48 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 Ω, Starting TJ = 25°C 4. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F TO-220F1 TO-220F TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W 2 of 7 QW-R502-103,C 7N70 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V Drain-Source Leakage Current IDSS VDS = 560 V, TC = 125°C Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Drain-Source ON-State Resistance RDS(ON) VGS = 10 V, ID = 3.5 A Forward Transconductance gFS VDS = 40 V, ID = 3.5 A (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-on Delay Time tD(ON) Turn-on Rise Time tR VDD = 350V, ID = 7.0 A (Note 1, 2) Turn-off Delay Time tD(OFF) Turn-off Fall Time tF Total Gate Charge QG VDS= 560V, ID= 7.0A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 700 V 1 μA 1 μA 100 nA -100 nA 0.67 V/℃ 2.0 1.4 8.0 4.0 1.6 V Ω S 1200 1600 150 190 18 25 35 79 80 52 30 6.5 13 320 2.4 pF pF pF 80 165 160 120 ns ns ns ns nC nC nC 1.4 V 7.0 A 28 A ns μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-103,C 7N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-103,C 7N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R502-103,C 7N70 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET 6 of 7 QW-R502-103,C 7N70 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On State Current vs. Allowable Case Temperature 1 0.1 Notes: 1. θJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Reverse Drain Current, IDR (A) Thermal Response, θJC (t) Transient Thermal Response Curve 10 150℃ 25℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-103,C