UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET N-CHANNEL 80V (D-S) MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology * 100 % RG and UIS Tested SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N08L-TA3-R 80N08G-TA3-R Note: G: GND, D: Drain, S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-468.a 80N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER RATINGS 80 Continuous Drain Current (Note 1) ID 80 Pulsed Drain Current (Note 2) ID,pulse 320 Avalanche Energy, Single Pulse (Note 2) EAS 810 Gate Source Voltage (Note 3) VGS ±20 Power Dissipation PTOT TC=25 °C 300 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. TEST CONDITIONS TC=25 °C, VGS=10 V TC=100 °C, VGS=10 V (Note 2) TC=25 °C ID=80A UNIT A A mJ V W °C °C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL SYMBOL θJA θJC RATINGS 62 0.5 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN ID=1mA, VGS=0V 80 VDS=75V, VGS=0V, TJ=25°C 2 VDS=75V, VGS=0V, TJ=125°C VDS=0V, VGS=20V TYP www.unisonic.com.tw UNIT V 0.01 1 1 Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.1 3.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS 4700 VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 1260 Reverse Transfer Capacitance CRSS 580 SWITCHING PARAMETERS (Note 2) Gate to Source Charge QGS 25 VDD=60V, VGS=0~10V, ID=80A Gate to Drain Charge QGD 69 144 Total Gate Charge QG Gate Plateau Voltage Vplateau 5.4 Turn-ON Delay Time tD(ON) 26 VDD=40V, RG=2.2Ω Rise Time tR 50 ID=80A, VGS=10V Turn-OFF Delay Time tD(OFF) 61 Fall-Time tF 30 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS IS Maximum Body-Diode Continuous Current TC=25°C (Note 2) Pulsed Current IS, pulse VSD IF=80A, VGS=0V, TJ=25°C 0.9 Drain-Source Diode Forward Voltage (Note1) Reverse Recovery Time (Note 2) tRR IF= IS, dIF/dt=100A/µs 110 VR=40V Reverse Recovery Charge (Note 2) QRR 470 Note: 1. Current is limited by bondwire; with an θJC= 0.5K/W the chip is able to carry 132A at 25°C. 2. Defined by design. Not subject to production test. 3. Qualified at -20V and +20V. UNISONIC TECHNOLOGIES CO., LTD MAX 1 100 100 4.0 12 µA nA V mΩ pF pF pF 37 116 180 80 320 1.3 140 590 nC nC nC V ns ns ns ns A V ns nC 2 of 3 QW-R502-468.a 80N08 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-468.a