UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N60L-TA3-T 8N60G-TA3-T 8N60L-TF1-T 8N60G-TF1-T 8N60L-TF3-T 8N60G-TF3-T 8N60L-T2Q-T 8N60G-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F TO-262 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 8 QW-R502-115,F 8N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 8 A 8 A Continuous ID Drain Current Pulsed (Note 2) IDM 32 A 230 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 147 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262 Junction to Case TO-220F/TO-220F1 SYMBOL θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATING 62.5 0.85 2.6 UNIT °C/W °C/W °C/W 2 of 8 QW-R502-115,F 8N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 600 V VDS = 600 V, VGS = 0V 10 µA 100 nA Forward VGS = 30 V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4A 1.0 1.2 Ω DYNAMIC CHARACTERISTICS 965 1255 pF Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS 105 135 pF f = 1MHz Reverse Transfer Capacitance CRSS 12 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 16.5 45 ns Turn-On Rise Time tR 60.5 130 ns VDD = 300V, ID = 8A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 81 170 ns Turn-Off Fall Time tF 64.5 140 ns Total Gate Charge QG 28 36 nC VDS= 480V,ID=8A, Gate-Source Charge QGS 4.5 nC VGS= 10V (Note 1, 2) Gate-Drain Charge QGD 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 8A 1.4 V Maximum Continuous Drain-Source Diode IS 8 A Forward Current Maximum Pulsed Drain-Source Diode ISM 32 A Forward Current Reverse Recovery Time trr VGS = 0V, IS = 8A, 365 ns dIF/dt = 100 A/µs (Note 2) Reverse Recovery Charge QRR 3.4 µC Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-115,F 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-115,F 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-115,F 8N60 Power MOSFET TYPICAL CHARACTERISTICS On-State Characteristics Drain Current, ID (A) 100 Transfer Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 10 10 1 Drain Current, ID (A) 5.0V 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°C 0.1 25°C 1 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) 4 3 VGS=20V 2 1 5 10 15 Drain Current, ID (A) 20 Ciss Capacitance (pF) 1500 1300 1100 Coss Crss 500 300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25°C 1 Notes: 1. VGS=0V 2. 250µs Test 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) 12 Gate-Source Voltage, VGS (V) Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1900 900 10 150°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Capacitance Characteristics (Non-Repetitive) 700 8 10 VGS=10V 1700 6 Body Diode Forward Voltage vs. Source Current TJ=25°C 0 4 Gate-Source Voltage, VGS (V) 5 0 Notes: 1. VDS=40V 2. 250µs Pulse Test 0.1 2 1 10 Drain-to-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage 6 150°C Gate Charge Characteristics ID=8A 10 VDS=300V 8 VDS=480V VDS=120V 6 4 2 0 0 5 10 15 20 25 30 Total Gate Charge, QG (nC) 6 of 8 QW-R502-115,F 8N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Temperature 1.2 On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -100 -50 0 50 100 150 200 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature 100 10 Operation in This Area is Limited by RDS(on) 100µs 100µs 10 1ms 10ms DC 1 Notes: 1. TJ=25°C 2. TJ=150°C 0.1 3. Single Pulse 1 200 8 Drain Current, ID (A) Drain Current, ID (A) 3.0 6 4 2 0 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (°C) Transient Thermal Response Curve Thermal Response, θJC (t) 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Notes: Single pulse 1. θJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-115,F 8N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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