UNISONIC TECHNOLOGIES CO., LTD
9N65
Preliminary
Power MOSFET
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N65 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N65 is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.
FEATURES
* RDS(ON)=1.1Ω @ VGSS=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N65L-TA3-T
9N65G-TA3-T
9N65L-TF3-T
9N65G-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
9
A
Continuous, @TC=25°C
ID
VGSS@10V
Drain Current
@TC=100°C
5.4
A
Pulsed (Note 2)
IDM
36
A
Avalanche Current (Note 2)
IAR
5.2
A
16
mJ
Single Pulsed (Note 2)
EAR
Avalanche Energy
Repetitive (Note 3)
EAS
375
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2.8
V/ns
167
TO-220
W
Power Dissipation(@TC=25°C)
TO-220F
44
PD
TO-220
1.3
Linear Derating Factor
W/°C
TO-220F
0.35
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting TJ=25°C, L=9.25mH, RG=25Ω, IAS=9A.
4. ISD≤5.2A, di/dt≤90A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220
TO-220F
TO-220
TO-220F
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62
62.5
0.75
2.86
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
Reference to 25°C, ID=1mA
∆ BVDSS /∆TJ
(Note 3)
VDS=650V, VGS=0V
IDSS
VDS=520V, VGS=0V, TJ=125°C
Forward
VGS=+30V
IGSS
Reverse
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=520V, VGS=10V, ID=9A
Gate to Source Charge
QGS
(Note 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=325V, ID=9A, RG=9.1Ω,
RD = 62Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
MOSFET symbol
showing the integral
Maximum Body-Diode Pulsed Current
reverse p-n junction
ISM
(Note 1)
diode.
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=9A,VGS=0V(Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
3. Uses IRFIB5N65A data and test conditions
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
V
0.67
V/°C
25
250
+100
-100
2.0
µA
nA
nA
4.0
0.85 1.1
V
Ω
1417
177
7
pF
pF
pF
48
12
19
nC
nC
nC
ns
ns
ns
ns
9
A
36
A
1.5
V
14
20
34
18
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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