UTC-IC MJE13007D

UNISONIC TECHNOLOGIES CO., LTD
MJE13007D
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
„
DESCRIPTION
The UTC MJE13007D is designed for high-voltage,
high-speed power switching inductive circuits where fall time is
critical. It is particularly suited for 115 and 220 V switch mode
applications.
„
FEATURES
* VCEO(SUS) 400V
* 700V Blocking Capability
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13007DL-TA3-T
MJE13007DG-TA3-T
MJE13007DL-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
(1)T: Tube
(1)Packing Type
(2)Package Type
(3)Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
(2) TA3: TO-220
(3) G: Halogen Free, L: Lead Free
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
VCEO
400
V
Collector-Emitter Breakdown Voltage
VCBO
700
V
Emitter-Base Voltage
VEBO
9.0
V
8.0
A
Continuous
IC
Collector Current
Peak (1)
ICM
16
A
4.0
A
Continuous
IB
Base Current
Peak (1)
IBM
8.0
A
12
A
Continuous
IE
Emitter Current
Peak (1)
IEM
24
A
Power Dissipation
TC = 25°C
PD
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1.56
°C/W
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
Collector-Emitter Sustaining Voltage
SYMBOL
VCEO(SUS)
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE1
hFE2
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
TEST CONDITIONS
IC=10mA, IB=0
VCES=700V
VCES=700V, TC=125°C
VEB=9.0V, IC=0
IC=2.0A, VCE=5.0V
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
IC=8.0A, IB=2.0A
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
IC=500mA, VCE=10V, f=1.0 MHz
VCB=10V, IE=0, f=0.1MHz
Current-Gain-Bandwidth Product
fT
Output Capacitance
COB
RESISTIVE LOAD (TABLE 1)
Delay Time
tD
VCC=125V, IC=5.0A,
Rise Time
tR
IB1=IB2=1.0A, tP=25μs,
Storage Time
tS
Duty Cycle≤1.0%
Fall Time
tF
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
400
TYP
8.0
5.0
4.0
14
80
0.025
0.5
1.8
0.23
MAX UNIT
V
0.1
mA
1.0
mA
100
μA
40
30
1.0
V
2.0
V
3.0
V
3.0
V
1.2
V
1.6
V
1.5
V
MHz
pF
0.1
1.5
3.0
0.7
μs
μs
μs
μs
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TYPICAL THERMAL RESPONSE
Transient thermal resistance,
r(t) (NORMALIZED)
„
NPN SILICON TRANSISTOR
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig. 7 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do not
debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case
temperature by using the appropriate curve on Fig. 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section.
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„
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE(Cont.)
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
CIRCUIT VALUES
TEST CIRCUITS
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
VCC=125V
RC=25Ω
D1=1N5820 OR EQUIV
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NPN SILICON TRANSISTOR
IC/IB=5
1.2
1
IC=-40°C
0.8
25°C
100°C
0.6
0.4
0.01 0.02 0.05 0.1 0.2 0.5 1
2
5 10
IC/IB=5
5
2
1
0.5
0.2
0.1
0.05
IC=-40°C
25°C
100°C
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1
5 10
2
Collector Current, IC (A)
Fig. 2 Base-Emitter Saturation Voltage
Fig. 3 Collector-Emitter Saturation Voltage
DC Current Gain, hFE
10000
TJ=25°C
Cib
Collector Current, IC (A)
Capacitance, C (pF)
10
Collector Current, IC (A)
Collector-Emitter Voltage, VCE (V)
Base-Emitte Saturation Voltage,
VBE(SAT) (V)
1.4
Collector-Emitte Saturation Voltage,
VCE(SAT) (V)
TYPICAL CHARACTERISTICS
„
1000
Cob
100
10
0.1
1
10
100
1000
Reverse Voltage,VR (V)
Fig. 6 Capacitance
UNISONIC TECHNOLOGIES CO., LTD
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100
50
20
10
Extended [email protected]μs,10μs
1μs
10μs
5
2 TC=25°C
1ms
DC
1
5ms
0.5
0.2
Bonding wire limit
0.1
Thermal limit
0.05
Second breakdown limit
0.02
0.01
10
curves apply below
rated vceo
20 30 50 70 100 200 300 500 1000
Collector-Emitter Voltage, VCE (V)
Fig. 7 Maximum Forward Bias Safe
Operating Area
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Time, t (ns)
Time, t (ns)
Power Derating Factor
Collector Current, IC (A)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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