UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC(MAX)=350mW Lead-free: MMBTA92L Halogen-free:MMBTA92G ORDERING INFORMATION Normal MMBTA92-AE3-R Ordering Number Lead Free Halogen Free MMBTA92L-AE3-R MMBTA92G-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-005,D MMBTA92 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta=25°C Collector Dissipation TC=25°C Derate Above Ta >25°C SYMBOL VCBO VCEO VEBO IC PC RATINGS -300 -300 -5 -500 350 1.5 12 UNIT V V V mA mW W mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 VCE=-10V, IC=-1mA DC Current Gain (Note) hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(SAT)1 IC=-20mA, IB=-2mA Current Gain Bandwidth Product fT VCE=-20V, IC=-10mA, f=100MHz Collector Base Capacitance Ccb VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)1<200mV (Class SIN) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -300 V -300 V -5 V -0.25 μA -0.10 μA 60 80 80 -0.5 V -0.90 V 50 MHz 6 pF 2 of 3 QW-R206-005,D MMBTA92 TYPICAL CHARACTERISTICS Saturation Voltage DC Current Gain 103 -104 IC=10*IB VCE(SAT), VBE(SAT) (mV) DC Current Gain, hFE VCE=-10V 102 101 100 -100 -10 1 -10 2 -10 3 4 -10 VBE(SAT) -102 -101 -100 -101 Current Gain Bandwidth Product (MHz) 101 1 -10 -10 -10 Collector-Base Voltage(V) VCE=-20V f=100MHz 102 CCB -10 -104 Current Gain Bandwidth Product CIB 0 -103 103 10 -1 -102 Collector Current, IC (mA) Capacitance 2 VCE(SAT) -103 Collector Current, IC (mA) CIB(pF), CCB(pF) PNP SILICON TRANSISTOR 2 101 -100 -101 -102 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-005,D