UTC-IC MMDT3906

UNISONIC TECHNOLOGIES CO., LTD
MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
DUAL PNP SMALL SIGNAL
SURFACE MOUNT TRANSISTOR
„
DESCRIPTION
The UTC MMDT3906 is a Dual PNP small signal surface mount
transistor. It’s suitable for low power amplification and switch.
„
FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMDT3906L-AL6-R
MMDT3906G-AL6-R
MMDT3906L-AL6-R
Package
Packing
SOT-363
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363
(3)Lead Free
(3) Halogen Free, L: Lead Free
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Copyright © 2011 Unisonic Technologies Co., Ltd
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„
„
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
MARKING
PIN CONFIGURATION
C2
B1
E1
4
5
6
1
2
3
E2
B2
C1
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www.unisonic.com.tw
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Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
RATINGS
625
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note)
DC Current Gain
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Small Signal Characteristics
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
COBO
CIBO
hIE
hRE
hFE
hOE
fT
Noise Figure
NF
TEST CONDITIONS
IC=-10 µA, IE=0
IC=-1.0mA, IB=0
IE=-10µA, IC=0
VCB= -30V, VEB(OFF)=-3.0V
VEB=-30V, VEB(OFF)=-3.0V
-40
-40
-5.0
IC=-100μA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-50mA, VCE=-1.0V
IC=-100mA, VCE=-1.0V
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
60
80
100
60
30
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=-20V, IC=-10mA, f=100MHz
VCE=-5.0V, IC=-100μA,
RS=1.0kΩ, f=1.0kHz
www.unisonic.com.tw
TYP MAX UNIT
-50
-50
-0.65
VCB=-5.0V, IE=0, f=1.0MHz
VEB=-0.5V, IC=0, f=1.0MHz
Switching Characteristics
VCC=-3.0V, IC= -10mA,
Delay Time
tD
VBE(OFF)=0.5V, IB1= -1.0mA
Rise Time
tR
VCC=-3.0V, IC= -10mA,
Storage Time
tS
IB1= IB2=-1.0mA
Fall Time
tF
Note: Short duration pulse test used to minimize self-heating effect.
UNISONIC TECHNOLOGIES CO., LTD
MIN
2.0
0.1
100
3.0
250
V
V
V
nA
nA
300
-0.25
-0.40
-0.85
-0.95
V
V
V
V
4.5
pF
10
pF
12
kΩ
-4
10 ×10
400
60
μS
MHz
4.0
dB
35
35
225
75
ns
ns
ns
ns
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Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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