UNISONIC TECHNOLOGIES CO., LTD PUMZ1 Preliminary NPN/PNP SILICON TRANSISTOR NPN/PNP GENERAL PURPOSE TRANSISTORS DESCRIPTION The UTC PUMZ1 is a NPN/PNP transistor, specially used in general purpose of switching and amplifying applications. Thus, two NPN/PNP transistors are operated independently in an SOT-363 package. FEATURES * Low Current: 100mA (MAX.) * Low Voltage: 40V (MAX.) * Less Number of Components And Boardspace Required * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number PUMZ1G-AL6-R Package SOT-363 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R218-011.a PUMZ1 Preliminary PIN CONFIGURATION PIN DESCRIPTION PIN NO. 1,4 2,5 3,6 PIN NAME Emitter Base Collector DESCRIPTION TR2; TR1 TR2; TR1 TR2; TR1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN/PNP SILICON TRANSISTOR 2 of 4 QW-R218-011.a PUMZ1 Preliminary NPN/PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Per Transistor; For The PNP Transistor With Negative Polarity Collector- Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA TA ≤ 25°C 200 mW Total Power Dissipation PD TA ≤ 25°C (Note2) 300 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Ambient Operating Temperature TOPR -65 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on an FR4 printed-circuit board. THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Note: Device mounted on an FR4 printed-circuit board. RATINGS 416 UNIT K/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Per Transistor; For The PNP Transistor With Negative Polarity VCB =30V, IE =0 Collect Cut-off Current ICBO VCB =30V, IE =0, TJ =150°C Emitter Cut-off Current IEBO VEB =4V, IC =0 hFE DC Current Gain VCE =6V, IC =1mA Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC =50mA, IB =5mA TR1 CC Collector Capacitance IE =ie = 0; VCB =12V; f = 1MHz TR2 fT Transition Frequency VCE =12V, IC =2mA, f =100MHz Note 1. Pulse test: tP ≤ 300 μs; δ ≤ 0.02. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 10 100 nA μA nA 200 1.5 2.2 mV pF pF MHZ 120 100 3 of 4 QW-R218-011.a PUMZ1 Preliminary NPN/PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R218-011.a