UNISONIC TECHNOLOGIES CO., LTD Preliminary SSM3K333R Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * RDS(ON)<42mΩ @ VGS=4.5V RDS(ON)<28mΩ @ VGS=10V * High switching speed * Low gate charge (Typ.=3.4nC) * Low CRSS (Typ.=28pF) SYMBOL 3. Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free SSM3K333RL-AE3-R SSM3K333RG-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-736.a SSM3K333R Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed RATINGS UNIT 30 V ±20 V 6 A 12 A 1 W Power Dissipation PD (Note 3) t=10s 2 W Channel Temperature TCH 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The channel temperature should not exceed 150°C during use. 3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm2) SYMBOL VDSS VGSS ID (Note 2) IDM (Note 2) ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=10mA, VGS=0V VDS=30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS= VGS, ID=0.1mA VGS=4.5V, ID=3A (Note 2) VGS=10V, ID=5A (Note 2) 1.3 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=4.5V, VDD=15V, ID=6A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=15V, ID=3A, VGS=0~4.5V, RG=10Ω Turn-OFF Delay Time tD(OFF) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=6A, VGS=0V Notes: 1. The channel temperature should not exceed 150°C during use. 2. Pulse test UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 µA +100 nA -100 nA 25.7 18.7 2.5 42 28 V mΩ mΩ 436 77 28 pF pF pF 3.4 1.8 1.0 12 9 nC nC nC ns ns 0.85 1.2 V 2 of 3 VER.a SSM3K333R Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-736.a