UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). FEATURES * High DC current gain : hFE = 1000 @ VCE =4V, IC=1A (Min) * Low collector-emitter saturation voltage EQUIVALENT TEST (R1≈10kΩ, R2≈0.6kΩ) C B R1 R2 E ORDERING INFORMATION Ordering Number Lead Free Halogen Free TIP112G-T60-K TIP112L-T60-K TIP112G-TA3-T TIP112L-TA3-T TIP112G-TN3-R TIP112L-TN3-R TIP112G-TN3-T TIP112L-TN3-T www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-126 TO-220 TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E B C E Packing Bulk Tube Tape Reel Tube 1 of 4 QW-R203-022.D TIP112 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage RATINGS UNIT 100 V 100 V 5 V 2 DC A Collector Current Peak 4 Base Current (DC) 50 mA TO-126 10 Collector Dissipation TO-220 PC 40 W TO-252 15 Junction Temperature TJ 150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ICM IB ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Collector-Base Cut-Off Current Collector-Emitter Cut-Off Current Emitter-Base Cut-Off Current SYMBOL VCEO(SUS) VCE(SAT) VBE(ON) ICBO ICEO IEBO DC Current Gain hFE Collector Capacitance COB TEST CONDITIONS IC=30mA, IB=0A IC=2A, IB=8mA VCE=4V, IC=2A VCB=100V, IE=0A VCE=50V, VB=0A VEB=5V, IC=0A VCE=4V, IC=1A VCE=4V, IC=2A VCB=10V, IE=0A, f=0.1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 100 TYP MAX 2.5 2.8 1 2 2 UNIT V V mA mA mA 1000 500 100 pF 2 of 4 QW-R203-022.D TIP112 TYPICAL CHARACTERISTICS Static Characteristics 2.0 IB=500uA IB=450uA IB=400uA Collector Current, IC (A) 1.8 1.6 IB=350uA 1.2 IB=200uA 1.0 0.8 0.6 IB=150uA 0.4 VCE=4V IB=300uA IB=250uA 1.4 DC Current Gain 10000 DC Current Gain, hFE NPN SILICON TRANSISTOR 1000 100 0.2 0.0 0 3 2 4 1 Collector-Emitter Voltage, VCE (V) 5 Safe Operating Area 10 10 0.01 1 0.1 Collector Current, IC (A) 10 Power Derating 80 70 5mS 1mS DC 1 60 50 40 30 20 10 0.1 0 1 100 10 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Case Temperature, TC (°C) 175 3 of 4 QW-R203-022.D TIP112 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-022.D