UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 23mΩ @VGS = 10 V * Ultra low gate charge ( typical 130 nC ) * Low reverse transfer Capacitance ( CRSS = typical 72 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3710L-TA3-T UF3710G-TA3-T UF3710L-TQ2-T UF3710G-TQ2-T UF3710L-TQ2-R UF3710G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 6 QW-R203-036.E UF3710 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain-Source Voltage VDSS 100 V Continuous (VGS=10V) ID 57 Drain Current A Pulsed (Note 2) IDM 230 Avalanche Current (Note 2) IAR 57 A Repetitive(Note 2) EAR 20 Avalanche Energy mJ Single Pulsed(Note 3) EAS 1060 (Note 4) Power Dissipation PD 165 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V 4. This is a typical value at device destruction and represents operation outside rated limits. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 0.75 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS IGSS △BVDSS/△TJ VGS(TH) RDS(ON) gFS CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT VGS=0V, ID=250μA 100 V VDS=100V, VGS=0V 25 μA VGS=±20V, VDS=0V ±100 nA ID=1mμA,Referenced to 25℃ 0.13 V/°C VDS=VGS, ID=250μA VGS=10V, ID=28A (Note) VDS=25V, ID=28 A VDS=25V, VGS=0V, f =1MHz 2.0 4.0 23 32 3130 410 72 V mΩ S pF pF pF 2 of 6 QW-R203-036.E UF3710 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING PARAMETERS Total Gate Charge QG VDS=80V, ID=28A, VGS=10V Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=28A, RG=2.5Ω VGS=10V (Note) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=28A, VGS=0V (Note) Maximum Continuous Drain-Source Diode IS MOSFET symbol showing Forward Current the integral reverse P-N Maximum Pulsed Drain-Source Diode junction diode. ISM Forward Current Body Diode Reverse Recovery Time trr IF=28A, dI/dt=100A/μs (Note) Body Diode Reverse Recovery Charge QRR Note: Pulse width ≤ 400μs; duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 130 26 43 nC nC nC ns ns ns ns 1.2 V 57 A 230 A 140 220 670 1010 ns nC 12 58 45 47 3 of 6 QW-R203-036.E UF3710 Power MOSFET TEST CIRCUITS AND WAVEFORMS + Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R203-036.E UF3710 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Same Type as D.U.T. 50kΩ 12V 0.2μF QG VGS 0.3μF VDS QGS QGD VGS DUT VG 3mA RG RD Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R203-036.E UF3710 Power MOSFET TYPICAL CHARACTERISTICS Drian Current vs Gate Threshold Voltage 800 400 700 350 Drain Current,ID(uA) Drain Current,ID(uA) Drian Current vs Drain Source Breakdown Voltage 600 500 400 300 200 300 250 200 150 100 100 50 0 0 160 0 40 80 120 140 Drain Source Breakdown Voltage,BVDS(V) 0 Drain - Source On-State Resistance Characteristics Drain Current. Source to Drain Voltage 10 25 8 20 6 15 4 10 2 5 0 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD(V) 5 1 2 3 4 Gate Threshold Voltage. VTH(V) ID=28A VGS=10V 0 100 200 300 400 500 Drain to Source Voltage VDS(mV) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R203-036.E