FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder, SMPS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant Application • Solar Inverter, UPS, Welder, SMPS, PFC C G G C E Power-247 E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF IFM (1) PD TJ Collector Current @ TC = 25oC 150 A Collector Current @ TC = 100oC 75 A Pulsed Collector Current @ TC = 25oC 225 A 25oC 75 A 50 A 225 A 750 W Diode Forward Current @ TC = Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation o @ TC = 100 C Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 375 W -55 to +175 o -55 to +175 oC 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature. ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. A2 1 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT March 2011 Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.2 o RθJC(Diode) Thermal Resistance, Junction to Case - 0.7 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W C/W Package Marking and Ordering Information Device Marking Device Package Packaging Type Qty per Tube FGY75N60SMD FGY75N60SMD Power-247 Tube 30ea Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.67 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 5.0 6.5 V IC = 75A, VGE = 15V - 1.90 2.50 V IC = 75A, VGE = 15V, TC = 175oC - 2.14 - V - 3800 - pF - 390 - pF - 105 - pF 24 32 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 56 73 ns td(off) Turn-Off Delay Time - 136 177 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 25oC - 22 29 ns - 2.3 2.99 mJ Turn-Off Switching Loss - 0.77 1.00 mJ Total Switching Loss - 3.07 3.99 mJ td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 53 - ns td(off) Turn-Off Delay Time - 146 - ns tf Fall Time - 15 - ns VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 175oC Eon Turn-On Switching Loss - 3.60 - mJ Eoff Turn-Off Switching Loss - 1.11 - mJ Ets Total Switching Loss - 4.71 - mJ FGY75N60SMD Rev. A2 2 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V Electrical Characteristics of the Diode Symbol TC = 25°C unless otherwise noted Parameter - 248 370 nC - 28 42 nC - 129 195 nC TC = 25°C unless otherwise noted Test Conditions Min. o Typ. Max TC = 25 C - 1.75 2.1 TC = 175oC - 1.35 - Reverse Recovery Energy TC = 175oC - 0.14 - trr Diode Reverse Recovery Time TC = 25oC - 41 55 TC = 175oC - 126 - Qrr Diode Reverse Recovery Charge TC = 25oC - 81 115 o - 736 - VFM Diode Forward Voltage Erec IF = 50A IF = 50A, dIF/dt = 200A/μs VR=400V FGY75N60SMD Rev. A2 TC = 175 C 3 Units V mJ ns nC www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 225 Figure 2. Typical Output Characteristics 225 o TC = 25 C 20V o 20V TC = 175 C 15V 15V 12V 180 Collector Current, IC [A] Collector Current, IC [A] 12V 10V 135 90 VGE = 8V 45 180 10V 135 90 VGE = 8V 45 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 0 Figure 3. Typical Saturation Voltage Characteristics 225 Common Emitter VCE = 20V Common Emitter VGE = 15V 180 TC = 25oC Collector Current, IC [A] Collector Current, IC [A] 5 Figure 4. Transfer Characteristics 225 o TC = 175 C 135 90 o 180 TC = 25 C o TC = 175 C 135 45 90 45 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 2 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 3.5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 1 2 3 4 Collector-Emitter Voltage, VCE [V] 3.0 150A 2.5 75A 2.0 IC = 40A 1.5 Common Emitter o TC = -40 C 16 12 8 150A 4 75A IC = 40A 1.0 25 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGY75N60SMD Rev. A2 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 150A 4 75A IC = 40A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 12 8 150A 4 75A IC = 40A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 8000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C 6000 Capacitance [pF] 16 0 20 Figure 9. Capacitance Characteristics TC = 175 C Cies 4000 Coes 2000 TC = 25 C, ICE=75A 300V 12 VCC = 200V 400V 9 6 3 Cres 0 0 1 10 Collector-Emitter Voltage, VCE [V] Figure 11. Turn-off Characteristics vs. Gate Resistance 5500 0 30 250 200 o 100 TC = 25 C o TC = 175 C tr Switching Time [ns] Switching Time [ns] 100 150 200 Gate Charge, Qg [nC] Figure 12. Turn-on Characteristics vs. Gate Resistance Common Emitter VCC = 400V, VGE = 15V IC = 75A 1000 50 td(off) 100 tf td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A o TC = 25 C o TC = 175 C 10 0 10 20 30 40 10 50 0 Gate Resistance, RG [Ω ] FGY75N60SMD Rev. A2 10 20 30 40 50 Gate Resistance, RG [Ω ] 5 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VGE = 15V, RG = 3Ω Common Emitter VGE = 15V, RG = 3Ω o o 100 TC = 25 C o TC = 175 C Switching Time [ns] TC = 175 C Switching Time [ns] tr TC = 25 C o td(off) 100 tf td(on) 10 5 10 0 30 60 90 120 0 150 30 Figure 15. Switching Loss vs. Collector Current 90 120 150 Figure 16. Switching Loss vs. Gate Resistance 30 30 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 3Ω 10 o TC = 25 C IC = 75A Eon o TC = 175 C 1 Eoff o 10 Switching Loss [mJ] Switching Loss [mJ] 60 Collector Current, IC [A] Collector Current, IC [A] TC = 25 C o TC = 175 C Eon Eoff 1 0.1 0.5 0 30 60 90 120 150 0 10 20 30 40 50 Gate Resistance, RG [Ω ] Collector Current, IC [A] Figure 17. SOA Characteristics Figure 18. Turn off Switching SOA Characteristics 500 300 10μs 100 Collector Current, IC [A] Collector Current, Ic [A] 100 100μs 1ms 10 10 ms DC 1 *Notes: o 1. TC = 25 C 10 Safe Operating Area o 2. TJ = 175 C 3. Single Pulse 0.1 1 FGY75N60SMD Rev. A2 10 100 Collector-Emitter Voltage, VCE [V] o 1 10 1000 VGE = 15V, TC = 175 C 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current vs. Frequency 160 250 o TJ <= 175 C, D = 0.5, VCE = 400V Collector Current, IC [A] 140 Collector Current, IC [A] Square Wave Common Emitter VGE = 15V 120 100 80 60 40 VGE = 15/0V, RG = 3Ω 200 150 o TC = 75 C 100 o TC = 100 C 50 20 0 25 0 1k 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] Figure 21. Forward Characteristics 10000 Reverse Current, ICES [μA] 100 o o TC = 25 C TC = 175 C o TC = 75 C o TC = 125 C 10 o TC = 25 C o TC = 75 C o 1000 o TC = 175 C 100 o TC = 125 C 10 1 o TC = 75 C 0.1 TC = 125 C o o TC = 25 C TC = 175 C 1 0 1 2 Forward Voltage, VF [V] 0.01 0 3 Figure 23. Stored Charge 500 600 o TC = 25 C Reverse Recovery Time, trr [ns] o 750 TC = 175 C 600 450 di/dt = 200A/μs di/dt = 100A/μs 300 150 0 20 40 60 o TC = 175 C 160 --- 120 di/dt = 100A/μs di/dt = 200A/μs 80 40 0 80 0 Forward Current, IF [A] FGY75N60SMD Rev. A2 200 300 400 Reverse Voltage, VR [V] 200 o TC = 25 C 0 100 Figure 24. Reverse Recovery Current 900 Stored Recovery Charge, Qrr [nC] 1M Figure 22. Reverse Current 400 Forward Current, IF [A] 10k 100k Switching Frequency, f [Hz] 20 40 60 80 Forward Current, IF [A] 7 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Typical Performance Characteristics FGY75N60SMD 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.3 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 PDM t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 26. Transient Thermal Impedance of Diode Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.005 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGY75N60SMD Rev. A2 8 www.fairchildsemi.com FGY75N60SMD 600V, 75A Field Stop IGBT Mechanical Dimensions Power-247 Dimensions in Millimeters FGY75N60SMD Rev. A2 9 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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