UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT40N03L-TN3-R UT40N03G-TN3-R UT40N03L-TM3-T UT40N03G-TM3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 TO-251 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 5 QW-R502-160.C UT40N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) RATINGS UNIT 30 V ±20 V 40 A 169 A TO-251 50 W Total Power Dissipation PD W TO-252 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-251 TO-252 TO-251 TO-252 θJA θJC RATINGS 62 62 2.5 2.5 UNIT ℃/W ℃/W ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-State Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =30 V, VGS =0 V, TJ=25℃ VGS = ±20V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10 V, ID =20 A VGS=4.5 V, ID =16 A 1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =25 V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS =15 V, ID=20 A, VGS =10V, RG =3.3 Ω, RL =0.75 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =24V,VGS =5 V,ID =20 A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD TJ=25℃, IS=40A, VGS=0V Maximum Continuous Drain-Source IS VD=VG=0V , VS=1.3V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 14 20 3 17 23 800 380 133 V µA nA V mΩ pF 7.2 60 22.5 10 17 3 10 ns nC 1.3 V 40 A 169 2 of 5 QW-R502-160.C UT40N03 Power MOSFET TYPICAL CHARACTERISTICS Typical Output Characteristics TC=25℃ VG=10V TC=150℃ VG=8.0V VG=6.0V 100 VG=4.0V 50 100 VG=6.0V 50 VG=4.0V VG=3.0V VG=3.0V 0 0 0 1 2 3 4 5 7 8 6 Drain-to-Source Voltage,VDS (V) 0 9 On-Resistance vs. Gate Voltage 28 1.8 Normalized On-Resistance,RDS(ON) ID=20A TC=25℃ 26 On-Resistance,RDS(ON) (mΩ) VG=10V VG=8.0V Drain Current,ID (A) 150 Drain Current,ID (A) Typical Output Characteristics 150 24 22 20 18 16 14 12 4 5 6 7 8 9 10 Gate-to-Source Voltage,VGS (V) 11 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage,VDS (V) Normalized On-Resistance vs. Junction Temperature ID=20A VG=10V 1.4 1.2 1 0.8 0.6 -50 0 50 100 Junction Temperature,TJ (℃) 150 Power,PD (W) Drain Current,ID (A) 3 1.6 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-160.C UT40N03 TYPICAL CHARACTERISTICS(Cont.) Reverse Drain Current,IS (A) 100 Forward Characteristics of Reverse Diode 10 1 TJ=150℃ TJ=25℃ 0.1 Gate Threshold Voltage vs. Junction Temperature 2 1 0 -50 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Body Diode Forward Voltage,VSD (V) 0 100 50 Junction Temperature,TJ (℃) 150 Drain Current,ID (A) Normalized Thermal Response,RthJC Capacitance,C (pF) Gate to Source Voltage,VGS (V) 0.01 0.1 3 Gate Threshold Voltage,VGS(TH) (V) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-160.C UT40N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-160.C