UNISONIC TECHNOLOGIES CO., LTD UT4413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified *Pb-free plating product number: UT4413L SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT4413-S08-R UT4413L-S08-R UT4413-S08-T UT4413L-S08-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package Packing SOP-8 SOP-8 Tape Reel Tube 1 of 6 QW-R502-198.A UT4413 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-198.A UT4413 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 1) ID -15 A Pulsed Drain Current (Note 2) IDM -80 A Power Dissipation(TC=25°C) PD 3 W ℃ Junction a Temperature TJ +150 ℃ Strong Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL Junction-to-Ambient MIN TYP MAX UNIT 62 75 ℃/W θJA ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source Breakdown Voltage ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =-250 µA VDS =-24 V, VGS =0 V VDS =0 V, VGS = ±25 V -30 VGS(TH) ID(ON) VDS =VGS, ID =-250 µA VDS =-5V, VGS =-10 V VGS =-20V, ID =-15A VGS =-10 V, ID =-15 A VGS =-6 V, ID =-10 A -1.5 -60 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =-15V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =-15V, VGS =-10V, ID =-15A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-10V,VDS=-15V,RL=1.0Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward VSD IS=-1A,VGS=0V Voltage(Note2) Maximum Continuous Drain-Source IS Diode Forward Current Reverse Recovery Time tRR IF=-15 A, dI/dt=100A/μs Reverse Recovery Charge QRR IF=-15 A, dI/dt=100A/μs Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5% max. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±100 V µA nA -2.2 -3.5 5.5 6.6 8.2 7 8.5 4245 5500 983 689 V A mΩ mΩ pF 69 15.2 18.8 16.5 23.5 116 82 90 -0.72 -1 V 5 A 77 ns nC 59 55 nC ns 3 of 6 QW-R502-198.A UT4413 Power MOSFET TYPICAL CHARACTERISTICS Drain Current,-ID (A) Transfer Characteristics On-Region Characteristics 30 30 -4.5V 25 -5V -10V 20 Drain Current,-ID (A) -4V 15 10 25 20 125℃ 15 10 VGS=-3.5V 5 VDS=-5V 25℃ 5 0 0 1 3 4 2 Drain to Source Voltage,-VDS (V) 5 2 On-Resistance vs. Gate-Source Voltage 1.0E+01 30 ID=-15A 25 Reverse Drain Current,-IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) 2.5 3 3.5 4 Gate to Source Voltage,-VGS (V) 4.5 Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) 0 20 15 125℃ 10 25℃ 5 0 4 16 12 8 Gate to Source Voltage,-VGS (V) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Body-Diode Characteristics 1.0E+00 125℃ 1.0E-01 1.0E-02 1.0E-03 25℃ 1.0E-04 1.0E-05 1.0E-06 0.0 1.0 0.4 0.6 0.2 0.8 Body Diode Forward Voltage,-VSD (V) 4 of 6 QW-R502-198.A UT4413 TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 10 Capacitance Characteristics 6000 VDS=-15V ID=-15A 5000 8 Capacitance (pF) Gate to Source Voltage,-VGS (V) Power MOSFET 6 4 2 CISS 4000 3000 2000 COSS 1000 CRSS 0 0 10 20 30 40 50 60 Gate Charge,-QG (nC) 0 70 5 10 15 20 25 Drain to Source Voltage,-VDS (V) 30 Normalized Transient Thermal Resistance,ZθJA Power (W) Drain Current,-ID (A) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-198.A UT4413 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-198.A