UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES Lead-free: UT4410L Halogen-free: UT4410G * RDS(ON) < 18mΩ @VGS = 4.5V * RDS(ON) < 12mΩ @VGS = 10 V * Ultra low gate charge ( typical 11 nC ) * Low reverse transfer capacitance ( CRSS = typical 35 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal UT4410-S08-R UT4410-S08-T Ordering Number Lead Free Plating UT4410L-S08-R UT4410L-S08-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Halogen Free UT4410G-S08-R UT4410G-S08-T Package Packing SOP-8 SOP-8 Tape Reel Tube 1 of 4 QW-R502-238.A UT4410 Power MOSFET DJL PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-238.A UT4410 Power MOSFET DJL ABSOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 11.6 A Pulsed Drain Current IDM 46.4 A Power Dissipation PD 3.6 W ℃ Junction Temperature TJ -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Notes: The device mounted on 1in2 FR4 board with 2 oz copper MIN TYP MAX 60 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TA =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Static Drain–Source On–Resistance(Note) SYMBOL TEST CONDITIONS IDSS IGSS VDS=30V, VGS=0V VGS=±20V, VDS=0V 1 VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=10A VGS=4.5V, ID=8A VDS= 5V, VGS=10V 1.3 RDS(ON) On-State Drain Current(Note) ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VDS=0V, VGS =0V, f=1.0MHz SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=25V, ID=1A, RL=25Ω VGEN=10V, RG=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS=15V, VGS=4.5V, ID=10A Total Gate Charge QGT VDS=15V, VGS=10V, ID=10A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=2.3 A,VGS=0V Note: Pulse test; pulse width ≤ 300us, duty cycle≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT ±100 1.6 12 17 3.0 18 20 20 µA nA V mΩ A 700 800 120 35 0.9 pF pF pF Ω 14 12 43 4 11 20 5 4.9 32 64 280 192 15 26 ns ns ns ns nC nC nC nC 0.7 1.1 V 3 of 5 QW-R502-238.A UT4410 Power MOSFET DJL TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 3500 3000 VDS 2500 90% 2000 1500 VGS 1000 10% tD(ON) 500 tD(OFF) tTHL tTLH 0 0 200 400 600 800 Source to Drain Voltage,VSD (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-238.A UT4410 Power MOSFET DJL UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-238.A