UNISONIC TECHNOLOGIES CO., LTD UT4435 Power MOSFET 30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SOP-8 FEATURES * RDS(ON)≤20mΩ @VGS=-10V * RDS(ON)≤ 35mΩ @VGS=-4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4435L-S08-R UT4435G-S08-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package Packing SOP-8 Tape Reel 1 of 5 QW-R502-254.B UT4435 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-254.B UT4435 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 2) ID -8.8 A Pulsed Drain Current (Note 2) IDM -50 A Power Dissipation PD 1 W Junction Temperature TJ 175 °С Storage Temperature TSTG -55 ~ +175 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP 125 25 MAX UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate-Threshold Voltage On State Drain Current Static Drain–Source On–Resistance SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0 V, ID=-250µA VDS=-24 V, VGS=0V VGS= ±25 V, VDS=0V -30 VGS(TH) ID(ON) VDS=VGS, IDS=-250µA VGS= -10V, VDS=-5V VGS=-10V, ID=-8.8A VGS=4.5V, ID=-6.7A VDS=-5V, ID=-8.8A -1 -50 RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=-15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note) Total Gate Charge QG VDS =-15 V, VGS =-5 V, ID =-8.8 A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-15V,ID=-1 A,VGS=-10 V RG=6 Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage(Note) VSD IS=-2.1A, VGS=0V Maximum Body-Diode Continuous IS Current Note: Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT -1 ±100 -1.7 -3 15 22 24 20 35 V µA nA V A mΩ S 1604 408 202 pF pF pF 17 5 6 13 13.5 42 25 24 23 24 68 40 nC nC nC ns ns ns ns -0.73 -1.2 V -2.1 A 3 of 5 QW-R502-254.B UT4435 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 3.0 2.5 0 10% 10% 2.0 VDS VGS 0 1.5 90% 90% 10% 1.0 90% 0.5 tR tD(ON) 0 0 0.2 0.4 0.6 0.8 Source to Drain Voltage, VSD (V) tF tD(OFF) 1.0 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 450 300 400 250 350 300 200 250 150 200 150 100 100 50 0 50 0 0.2 0.4 0.6 Gate Threshold Voltage, VTH (V) 0.8 0 0 20 30 50 40 10 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 12 10 VGS=-10V, ID=-8.8A 8 6 VGS=-4.5V, ID=-6.7A 4 2 0 0 300 100 200 Drain to Source Voltage, VDS (mV) 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-254.B UT4435 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-254.B