UNISONIC TECHNOLOGIES CO., LTD UT45N03 Power MOSFET 40A, 25V N-CHANNEL POWER MOSFET FEATURES * RDS(ON) = 21mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT45N03L-TM3-R UT45N03G-TM3-R UT45N03L-TN3-T UT45N03G-TN3-T UT45N03L-TN3-R UT45N03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 5 QW-R502-165.C UT45N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current ID 40 A Pulsed Drain Current (Note 1) IDM 160 A Power Dissipation 65 W PD Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 50 1.92 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source Breakdown Voltage ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250μA VGS(TH) VDS =VGS, ID = 1mA VGS=5V, ID=25A VGS=10V, ID=25A VGS=3.5V, ID=5.2A www.unisonic.com.tw MAX UNIT 0.05 10 10 100 V µA nA 1.5 17.5 13 22 2 24 21 40 25 VDS=25V, VGS =0V VDS =0V, VGS = ±5V DYNAMICCHARACTERISTICS Input Capacitance CISS VDS =25 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS = 10 V, VDD =15 V, ID = 15 A, RG = 6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDD =24V,VGS =5V, ID =40 A Gate-to-Source Charge QGS Gate-to-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=25A,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD MIN TYP 1 700 290 200 V mΩ pF 10 60 35 40 19 5 8 20 90 60 60 0.95 1.2 ns nC 11 V 40 A 160 2 of 5 QW-R502-165.C UT45N03 Power MOSFET TYPICAL CHARACTERISTICS Output Characteristics 45 10V 5V 6V Transfer Characteristics 45 TJ=25℃ 4V VDS>ID×RDS(ON) 3.5V 30 30 3V 15 15 2.5V 175℃ VGS=2V 0 0.4 0.8 1.2 1.6 Drain-Source Voltage, VDS (V) 0 2 Normalized Total Power Dissipation 120 0 80 1 2 3 4 Gate-Source Voltage, VGS (V) 5 Normalized Continuous Drain Current 120 Normalized Continuous Drain Current, ID (％) Normalized Power Dissipation, Pder (％) 0 TJ=25℃ 80 40 Pder= 0 ×100% PD(25°C) 50 100 150 Temperature, TC (℃) 200 Ider= ID ID(25°C) ×100% 0 0 50 100 150 Temperature, TC (℃) 200 Current Drain, ID (A) Gate-Threshold Voltage, VGS(TH)(V) 0 PD 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-165.C UT45N03 Source Current, IS (A) TYPICAL CHARACTERISTICS(Cont.) ZthJmb (K/W) Drain Current, ID (A) C(pF) Gate-Source Voltage, VGS (V) RDS(ON) (Ω) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-165.C UT45N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-165.C