UNISONIC TECHNOLOGIES CO., LTD UT6401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT6401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate charge. This device is suitable for use as a load switch or in PWM applications. SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UT6401L-AG6-R UT6401G-AG6-R Package SOT-26 1 D Pin Assignment 2 3 4 5 D G S D 6 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-151.B UT6401 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 Continuous Drain Current (Note 3) ID -5 A Pulsed Drain Current (Note 2) IDM -30 Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA MIN TYP 74 MAX 110 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance (Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=±12V -30 VGS(TH) ID(ON) VDS=VGS, ID=-250uA VDS=-5V, VGS=-4.5V VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A -0.7 -25 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=-15V, VGS=-10V, RG=6Ω, RL=3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-15V, VGS=-4.5V, Gate-Source Charge QGS ID=-5A Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5%. 3. Surface mounted on 1 in2 copper pad of FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNITS -1 ±100 -1 -1.3 42 53 81 49 64 119 V uA nA V A mΩ mΩ mΩ 943 108 73 pF pF pF 6 3 40 11 9.5 2.1 2.9 ns ns ns ns nC nC nC -0.75 -1 V -3 A 2 of 5 QW-R502-151.B UT6401 TYPICAL CHARACTERISTICS Capacitance (pF) On-Resistance, RDS(ON) (mΩ) Drain Current, -ID (A) Drain-Current, -ID (A) Power MOSFET On-Resistance vs. Gate-Source Voltage 1.0E+01 170 ID=-2A 130 110 90 125℃ 70 50 30 1 0 Body-Diode Characteristics 1.0E+00 150 Source Current, -IS (A) On-Resistance, RDS(ON) (mΩ) 190 25℃ 1.0E-01 125℃ 1.0E-02 1.0E-03 1.0E-04 25℃ 1.0E-05 0 2 4 6 8 Gate-Source Voltage, -VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0E-06 0.0 1.0 0.2 0.4 0.6 0.8 Source-Drain Voltage, -VSD (V) 1.2 3 of 5 QW-R502-151.B UT6401 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics 40 VDS=-15V ID=-5A 4 TJ(Max)=150℃ TA=25℃ 30 Power (W) Gate-Source Voltage, -VGS (V) 5 Single Pulse Power Rating Junction-toAmbient 3 2 20 10 1 0 2 4 6 8 10 Gate Charge, -QG (nC) 12 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Drain-Current, -ID (A) Normalized Transient Thermal Resistance,ZθJA 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-151.B UT6401 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-151.B