VS-60CPU04-F3 Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt® FEATURES Base common cathode 2 • Low forward voltage drop • 175 °C operating junction temperature • Ultrafast recovery time • Low leakage current • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level 1 3 Anode Anode 2 1 2 Common cathode TO-247AC DESCRIPTION/APPLICATIONS VS-60CPU04-F3 series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 30 A VR 400 V These devices are intended for use in the output rectification stage of SMPS, welding, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters, and chopper motor drives. VF at IF 1.30 V trr (typical) 37 ns TJ maximum 175 °C Diode variation Single die Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per leg Average rectified forward current per device Non-repetitive peak surge current per leg UNITS 400 V 30 IF(AV) Rated VR, TC = 134 °C IFSM TJ = 25 °C IFM Rated VR, square wave, 20 kHz, TC = 134 °C Peak repetitive forward current per leg Operating junction and storage temperatures VALUES 60 A 300 TJ, TStg 60 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 30 A - 1.10 1.30 IF = 30 A, TJ = 150 °C - 0.92 1.10 IR = 100 μA IF = 60 A - 1.25 1.6 IF = 60 A, TJ = 150 °C - 1.10 1.4 VR = VR rated - - 10 TJ = 150 °C, VR = VR rated - - 100 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 400 V - 40 - pF Series inductance LS Measured lead to lead 5 mm from package body - 12 - nH Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-60CPU04-F3 Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 37 40 IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 46 - TJ = 25 °C - 65 - - 119 - - 6.4 - - 14.7 - TJ = 25 °C - 206 - TJ = 125 °C - 874 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.6 1.0 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 6 - - 0.21 - oz. - 12 (10) kgf · cm (lbf · in) Reverse recovery time SYMBOL trr TEST CONDITIONS TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] °C/W g 60CPU04 Document Number: 93189 Revision: 17-Sep-10 VS-60CPU04-F3 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 1 0.4 Vishay Semiconductors 1000 1000 TJ = 175 °C 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Ultrafast Rectifier, 2 x 30 A FRED Pt® TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 2.0 VF - Forward Voltage Drop (V) 93189_01 100 200 250 300 350 400 VR - Reverse Voltage (V) 93189_02 Fig. 1 - Typical Forward Voltage Drop Characteristics 150 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 93189_03 50 100 150 200 250 300 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 0.01 0.001 0.00001 93189_04 Single pulse (thermal resistance) 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-60CPU04-F3 Ultrafast Rectifier, 2 x 30 A FRED Pt® 180 1000 160 DC trr (ns) Allowable Case Temperature (°C) Vishay Semiconductors 140 IF = 30 A, TJ = 125 °C 100 IF = 30 A, TJ = 25 °C Square wave (D = 0.50) Rated VR applied 120 See note (1) 100 0 5 10 15 20 25 30 35 40 IF(AV) - Average Forward Current (A) 93189_05 10 100 45 Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 60 10 000 50 40 Qrr (nC) Average Power Loss (W) 1000 dIF/dt (A/μs) 93189_07 RMS limit 30 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 20 10 93189_06 5 10 15 20 25 30 35 40 1000 IF = 30 A, TJ = 25 °C 0 0 IF = 30 A, TJ = 125 °C 45 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 100 100 93189_08 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93189 Revision: 17-Sep-10 VS-60CPU04-F3 Ultrafast Rectifier, 2 x 30 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93189 Revision: 17-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-60CPU04-F3 Ultrafast Rectifier, 2 x 30 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 C P U 04 -F3 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (60 = 60 A) 3 - Circuit configuration: C = Common cathode 4 - P = TO-247AC 5 - U = Ultrafast rectifier 6 - Voltage rating (04 = 400 V) 7 - Environmental digit: -F3 = RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-60CPU04-F3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?95398 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93189 Revision: 17-Sep-10 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1