FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Shielded Gate MOSFET Technology Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A 100% UIL tested Application RoHS Compliant DC - DC Conversion D D G S G D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 8 A 40 Single Pulse Avalanche Energy PD Units V 50 -Pulsed EAS Ratings 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 180 132 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.94 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86250 Device FDD86250 ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 106 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 VGS = 10 V, ID = 8 A 18.4 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 6.5 A 21.4 31 VGS = 10 V, ID = 8 A, TJ = 125 °C 35.8 45 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 8 A 2.9 mV/°C 22 28 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 1585 2110 pF 167 225 pF 7 15 pF Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time 11.2 20 tr Rise Time 10 ns td(off) Turn-Off Delay Time VDD = 75 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω 3.7 20 32 ns tf Fall Time 4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 23 33 nC Qg Total Gate Charge VGS = 0 V to 5 V 12.8 18 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 8 A ns nC 6.7 nC 4.7 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.78 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.73 1.2 IF = 8 A, di/dt = 100 A/μs V 71 113 ns 104 166 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. b) 96 °C/W when mounted on a minimum pad a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 1.0 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 2 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 6 V VGS = 5.5 V 30 VGS = 5 V 20 10 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 4.5 V VGS = 5 V 3 2 VGS = 5.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 125 oC 20 TJ = 25 oC 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID = 8 A 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 30 VDS = 5 V TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 40 80 ID = 8 A VGS = 10 V 2.2 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 VGS = 10 V VGS = 6 V 2 3 4 5 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 6 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 3 1.2 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 4000 ID = 8 A VDD = 50 V Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 Coss 100 10 2 0 0 5 10 15 20 1 0.1 25 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 60 100 TJ = 10 50 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 25 oC TJ = 100 oC TJ = 125 oC 40 VGS = 10 V 30 Package Limited VGS = 6 V 20 10 o RθJC = 0.94 C/W 1 0.001 0.01 0.1 1 10 0 25 40 tAV, TIME IN AVALANCHE (ms) 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 10 100 μs THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms DC o RθJC = 0.94 C/W TC = 25 oC 0.1 0.1 75 o 50 1 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 1 10 100 500 TC = 25 oC 1000 100 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward BiasSafe Operating Area ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 SINGLE PULSE RθJC = 0.94 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC o RθJC = 0.94 C/W 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 5 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 6 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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