IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A E PG-TO-247-3 PG-TO220-3-1 Qualified according to JEDEC2 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package IGW03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-247-3 IGP03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector current IC A 9.6 3.9 TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax ICpuls 9.9 Turn off safe operating area - 9.9 Gate-emitter voltage VGE ±20 V Power dissipation Ptot 62.5 W -40...+150 °C VCE ≤ 1200V, Tj ≤ 150°C TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 2 260 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit 2.0 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, RthJA junction – ambient PG- TO- 220- 3-1 62 PG-TO-247-3 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j = 25°C - 2.2 2.8 T j = 150 °C - 2.5 - V G E = 10 V, I C = 3 A , T j = 25°C - 2.4 - 2.1 3 3.9 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =300 μA Collector-emitter saturation voltage VCE(sat) V V G E = 15 V, I C = 3 A Gate-emitter threshold voltage VGE(th) I C = 9 0 μA,V C E = V G E Zero gate voltage collector current ICES V C E = 12 00 V, V G E = 0 V μA T j = 25°C - - 20 T j = 150 °C - - 80 Gate-emitter leakage current IGES V C E = 0 V ,V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C = 3 A - 2 - S Input capacitance Ciss V C E =25V, - 205 - pF Output capacitance Coss VGE=0V, - 24 - Reverse transfer capacitance Crss f=1MHz - 7 - Gate charge QGate V C C = 96 0 V, I C = 3 A - 22 - nC PG- TO- 220- 3-1 - 7 - nH PG-TO-247-3 - 13 - Dynamic Characteristic V G E =15V Internal emitter inductance measured 5mm (0.197 in.) from case Power Semiconductors LE 2 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 9.2 - - 5.2 - - 281 - - 29 - - 0.14 - - 0.15 - - 0.29 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25°C , V C C = 80 0 V, I C = 3 A , V G E =15V/0V, R G = 8 2Ω , L σ 2 ) =1 80nH, C σ 2 ) =40pF Energy losses include “tail” and diode 3) reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 9.4 - - 6.7 - - 340 - - 63 - - 0.22 - - 0.26 - - 0.48 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 150 °C V C C = 80 0 V, IC=3A, V G E =15V/0V, R G = 8 2Ω , L σ 2 ) =1 80nH, C σ 2 ) =40pF Energy losses include “tail” and diode 3) reverse recovery. ns mJ Switching Energy ZVT, Inductive Load Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff mJ V C C = 80 0 V, IC=3A, V G E =15V/0V, R G = 8 2Ω , C r 2 ) = 4n F 2) 3) T j = 25°C - 0.05 - T j = 150 °C - 0.09 - Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 Ic 12A t p =1 μs 10A 5 μs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 8A TC=80°C 6A TC=110°C 4A 2A 0A 10Hz Ic 100Hz 10 μs 1A 50 μs 100 μs 0,1A 500 μs DC 1kHz 10kHz ,01A 100kHz 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82Ω) 12A 60W 10A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50W 40W 30W 20W 10W 0W 25°C 50°C 75°C 100°C 6A 4A 2A 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 8A 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 10A 10A 9A 8A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 8A VGE=15V 6A 12V 10V 8V 6V 4A 2A 7A 6A 5A VGE=15V 12V 10V 8V 6V 4A 3A 2A 1A 0A 0V 1V 2V 3V 4V 0A 0V 5V 12A IC, COLLECTOR CURRENT 10A 8A 6A Tj=+150°C Tj=+25°C 4A 2A 0A 3V 5V 7V 9V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 1V 3V IC=6A IC=3A 2V IC=1.5A 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 1000ns 1000ns td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf td(on) 10ns 100ns tf td(on) 10ns tr tr 1ns 0A 2A 1ns 4A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 82Ω, dynamic test circuit in Fig.E) 100ns tf td(on) tr 50°C 75°C 100°C 125°C 150°C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE t, SWITCHING TIMES 100Ω 150Ω 5V td(off) 1ns 25°C 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E) 1000ns 10ns 0Ω Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E) Power Semiconductors 4V max. 3V typ. 2V min. 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA) 6 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 1.0mJ 1 1 Ets 0.7mJ 1 E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES ) Eon and Ets include losses due to diode recovery. Eoff 0.5mJ 1 Eon 0A 2A 0.4mJ 0.3mJ 0.5mJ 1 E, SWITCHING ENERGY LOSSES ) Eon and Ets include losses due to diode recovery. Ets 1 0.4mJ 0.3mJ Eoff 1 Eon 0.2mJ 0.1mJ 25°C 80°C 125°C 150°C 1 Eon 50Ω 100Ω 150Ω 200Ω 250Ω IC=3A, TJ=150°C 0.16mJ 0.12mJ IC=3A, TJ=25°C 0.08mJ IC=1A, TJ=150°C 0.04mJ IC=1A, TJ=25°C 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us dv/dt, VOLTAGE SLOPE Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E ) Power Semiconductors Eoff RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E ) Eoff, TURN OFF SWITCHING ENERGY LOSS IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 82Ω, dynamic test circuit in Fig.E ) 1 0.5mJ 0Ω 4A Ets 0.6mJ 0.2mJ 0.0mJ ) Eon and Ets include losses due to diode recovery. Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E) 7 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 D=0.5 0 10 K/W VGE, GATE-EMITTER VOLTAGE ZthJC, TRANSIENT THERMAL RESISTANCE 20V 0.2 0.1 0.05 -1 10 K/W R,(K/W) 1.082517 0.328671 0.588811 0.02 0.01 τ, (s) 0.000795 0.000179 0.004631 R1 R2 -2 10 K/W single pulse 1µs 10µs C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 100µs 1ms 10ms 15V UCE=240V 10V UCE=960V 5V 0V 0nC 100ms QGE, GATE CHARGE Figure 16. IGBT transient thermal resistance (D = tp / T) 10nC 20nC 30nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A) 1000V 1nF 100pF Coss 10pF Crss 800V 2A 600V 400V 1A 200V 0A 0V 0V 10V 20V 0.0 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) Power Semiconductors ICE COLLECTOR CURRENT C, CAPACITANCE Ciss VCE, COLLECTOR-EMITTER VOLTAGE 3A 0.2 0.4 0.6 0.8 1.0 1.2 tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) 8 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 VGE, GATE-EMITTER VOLTAGE 2A 600V 400V 1A 200V 0A ICE COLLECTOR CURRENT 3A 800V 0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) Power Semiconductors 9 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 PG-TO247-3 Power Semiconductors 10 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 PG-TO220-3-1 Power Semiconductors 11 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r2 r1 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit ½ Lσ öö DUT (Diode) L Cσ Cr VDC RG DUT (IGBT) ½ Lσ Figure E. Dynamic test circuit Leakage inductance Lσ = 180nH, Stray capacitor Cσ = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching) Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.6 Febr. 08 IGP03N120H2 IGW03N120H2 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2/18/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.6 Febr. 08