FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14m: Features General Description Max rDS(on) = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management applications. Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.7A Low Profile - 0.8 mm max in MLP 3.3X3.3 RoHS Compliant Application DC - DC Conversion Bottom Top 8 1 7 D D D D 6 5 2 3 4 G S S S Pin 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C TJ, TSTG Units V ±20 V 16.5 38 (Note 1a) -Pulsed PD Ratings 30 9.6 A 60 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 31 (Note 1a) Operating and Storage Junction Temperature Range 2.1 -55 to +150 W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 4 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC8878 Device FDMC8878 ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev.D4 Package MLP 3.3X3.3 1 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET July 2012 Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 20 mV/°C VDS = 24V, VGS = 0V 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V PA ±100 nA 3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250PA, referenced to 25°C VGS = 10V, ID = 9.6A 9.6 14.0 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 8.7A 12.1 17.0 VGS = 10V, ID = 9.6A , TJ = 125°C 13.5 20.0 gFS VDS = 5V, ID = 9.6A Forward Transconductance 1 1.7 -5.7 mV/°C 35 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1000 1230 pF 183 255 pF 118 180 pF : 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 9.6A VGS = 10V, RGEN = 6: VGS = 10V , VDD = 15V , ID = 9.6A 8 16 ns 4 10 ns 20 36 ns 3 10 ns 18 26 nC 2.8 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 9.6A (Note 2) IF = 9.6A, di/dt = 100A/Ps 0.8 1.2 V 23 35 ns 14 21 nC Notes: 1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev. D4 2 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 50 VGS = 3.5V 40 VGS = 4.5V VGS = 4V 30 VGS = 3V 20 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 60 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 2.0 VGS = 3V 1.0 VGS = 10V 0.5 0 4 20 10 30 40 50 60 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 30 ID = 9.6A VGS = 10V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.5V 1.5 Figure 1. On-Region Characteristics 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 ID = 9.6A 20 TJ = 125oC 15 10 TJ = 25oC 5 3 Figure 3. Normalized On- Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VDD = 5V 40 30 TJ = 25oC 20 TJ = -55oC TJ = 150oC 10 0 0 1 2 3 10 100 VGS = 0V 10 1 0.1 Figure 5. Transfer Characteristics TJ = 25oC TJ = 150oC TJ = -55oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev. D4 9 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 60 50 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 25 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 4V VGS = 4.5V 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = 9.6A VDD = 15V Ciss CAPACITANCE (pF) 8 VDD = 10V 6 VDD = 20V 4 2 1000 Coss 50 0.1 0 0 5 10 15 20 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 12 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 10 8 VGS = 10V 6 VGS = 4.5V 4 2 o RTJA = 60 C/W 1 0.01 0 80 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 25 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms 1 100ms 1s 10s DC SINGLE PULSE TJ = MAX RATED TA = 25oC 0.01 0.001 0.1 1 10 80 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 300 VGS = 10V TA = 25oC FOR TEMPERATURES 100 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 I = I25 10 SINGLE PULSE 1 0.5 -3 10 -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev. D4 100 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 75 o 80 0.1 50 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 100 4 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.003 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev. D4 5 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8878 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev. D4 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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D4 7 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™