Dual N-Channel Power Trench® MOSFETTM 25 V, 7.0 A, 23 mΩ Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed Low gate charge These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required. High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS Compliant Pin 1 Q2 D2 5 4 G2 D2 6 3 S2 Q1 MicroFET 3X1.9 D1 7 2 G1 D1 8 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 25 Units V ±20 V 7.0 28 Power Dissipation TA = 25 °C (Note 1a) 1.6 Power Dissipation TA = 25 °C (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 165 °C/W Package Marking and Ordering Information Device Marking 3900 Device FDMB3900AN ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 Package MicroFET 3X1.9 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM December 2011 FDMB3900AN Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 25 V 17 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 7.0 A 19 23 Static Drain to Source On Resistance VGS = 4.5 V, ID = 5.5 A 26 33 VGS = 10 V, ID = 7.0 A TJ = 125 °C 26 32 VDS = 5 V, ID = 7.0 A 27 rDS(on) gFS Forward Transconductance 1.0 2.0 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V f = 1MHz 650 890 pF 151 200 pF 141 215 pF Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 13 V, ID = 7.0 A VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V ID = 7.0 A 6 12 ns 3 10 ns 15 26 ns 3 10 ns 11 17 nC 7 10 nC 2.0 nC 3.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.25 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 7.0 A (Note 2) 0.9 1.2 14 24 ns 3 10 nC IF = 7.0 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.165 °C/W when mounted on a minimum pad of 2 oz copper a. 80 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 2 www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 28 4 ID, DRAIN CURRENT (A) VGS = 6 V 21 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 4 V VGS = 4.5 V 14 VGS = 3.5 V 7 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 VGS = 3.5 V VGS = 4.5 V 2 1 0 0 7 rDS(on), DRAIN TO 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 60 ID = 7 A 40 TJ = 125 oC 20 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 IS, REVERSE DRAIN CURRENT (A) 28 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 28 80 1.4 21 VDS = 5 V 14 TJ = TJ = 150 oC 25 oC 7 TJ = -55 oC 0 21 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 7 A VGS = 10 V -50 14 VGS = 10 V ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 0.6 -75 VGS = 6 V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 4 V 3 1 2 3 4 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM Typical Characteristics TJ = 25°C unless otherwise noted 900 ID = 7 A 800 8 VDS = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDS = 13 V 6 VDS = 15 V 4 2 700 600 500 400 300 Coss 200 Crss 0 0 3 6 9 100 0.1 12 1 10 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 8 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V Ciss 6 VGS = 10 V 4 VGS = 4.5 V 2 10 THIS AREA IS LIMITED BY rDS(on) 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 165 oC/W o 50 1 ms 1 RθJA = 80 C/W 0 25 100 μs TA = 25 oC 75 100 125 0.01 0.01 150 o TA, AMBIENT TEMPERATURE ( C) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area 300 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 165 C/W 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 4 www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 165 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 5 www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM Typical Characteristics TJ = 25°C unless otherwise noted FDMB3900AN Dual N-Channel Power Trench® MOSFETTM Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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I61 ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 7 www.fairchildsemi.com FDMB3900AN Dual N-Channel Power Trench® MOSFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ FRFET® PowerXS™ AX-CAP™* Global Power ResourceSM Programmable Active Droop™ BitSiC® QFET® Green Bridge™ TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ and Better™ SmartMax™ TranSiC® EcoSPARK® MegaBuck™ SMART START™ TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT®* ESBC™ MicroFET™ SPM® μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™