FAIRCHILD FDPF320N06L

FDPF320N06L
N-Channel PowerTrench® MOSFET
60V, 21A, 25mΩ
Features
Description
• RDS(on) = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• RDS(on) = 23mΩ ( Typ.)@ VGS = 5V, ID = 17A
• Low Gate Charge ( Typ. 23.2nC)
• Low Crss ( Typ. 64pF)
• Fast Switching
Application
• 100% Avalanche Tested
• DC to DC converters / Synchronous Rectification
• Improved dv/dt Capability
• RoHS Compliant
D
G
GC E
TO-220F
(Retractable)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
- Pulsed
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
V
15
- Continuous (TC = 100oC)
Drain Current
±20
21
Drain Current
IDM
Units
V
- Continuous (TC = 25oC)
ID
EAS
FDPF320N06L
60
- Derate above 25oC
A
(Note 1)
84
A
(Note 2)
66
mJ
(Note 3)
6.0
V/ns
26
W
0.17
W/oC
-55 to +175
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF320N06L
RθJC
Thermal Resistance, Junction to Case
5.8
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2010 Fairchild Semiconductor Corporation
FDPF320N06L Rev. A4
1
Units
oC/W
www.fairchildsemi.com
FDPF320N06L N-Channel PowerTrench® MOSFET
December 2010
Device Marking
FDPF320N06L
Device
FDPF320N06L
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
60
-
-
V
-
0.04
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
-
-
1
VDS = 48V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
VGS = VDS, ID = 250μA
1.0
-
2.5
V
-
20
25
mΩ
ID = 250μA, Referenced to
25oC
μA
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 21A
VGS = 5V, ID = 17A
VDS = 10V, ID = 21A
(Note 4)
-
23
38
mΩ
-
34
-
S
-
1105
1470
pF
-
115
150
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
VGS = 10V
VGS = 5V
Qg(tot)
Total Gate Charge at 5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V
ID = 21A
-
64
-
pF
-
23.2
30.2
nC
-
12.7
16.5
nC
-
3.4
-
nC
-
6.3
-
nC
-
16
42
ns
-
34
78
ns
-
27
64
ns
-
8
26
ns
-
2
-
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
ESR
Equivalent Series Resistance (G-S)
VDD = 30V, ID = 21A
VGS = 5V, RGEN = 4.7Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
21
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
84
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 21A
-
-
1.3
V
trr
Reverse Recovery Time
-
27
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 21A, VDD = 48V
dIF/dt = 100A/μs
(Note 4)
-
23
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 11.5A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 21A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF320N06L Rev. A4
2
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FDPF320N06L N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
100
VGS = 15.0V
10.0V
8.0V
5.0V
4.0V
3.5V
3.0V
ID, Drain Current[A]
ID, Drain Current[A]
100
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
10
o
175 C
o
10
25 C
o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
2
0.1
1
1
VDS, Drain-Source Voltage[V]
1
4
2
3
4
VGS, Gate-Source Voltage[V]
0.04
100
IS, Reverse Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
RDS(ON) [Ω],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.03
VGS = 10V
0.02
VGS = 20V
o
175 C
*Notes:
1. VGS = 0V
*Note: TC = 25 C
0.01
0
20
40
60
ID, Drain Current [A]
80
1
0.0
100
o
25 C
10
o
2. 250μs Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
10
1000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
5
Ciss
Coss
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
100
40
0.1
FDPF320N06L Rev. A4
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
*Note: ID = 21A
0
1
10
VDS, Drain-Source Voltage [V]
0
60
3
4
8
12
16
20
Qg, Total Gate Charge [nC]
24
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FDPF320N06L N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 21A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
300
24
100μs
ID, Drain Current [A]
ID, Drain Current [A]
100
10
1
1ms
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
18
VGS = 10 V
12
VGS = 5 V
*Notes:
0.1
6
o
1. TC = 25 C
o
0.01
0.1
2. TJ = 175 C
3. Single Pulse
o
RθJC = 5.8 C/W
1
10
VDS, Drain-Source Voltage [V]
0
25
100
50
75
100
125
o
150
175
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
8
0.5
1
0.2
0.1
t1
0.02
0.1
t2
0.01
*Notes:
o
1. ZθJC(t) = 5.8 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FDPF320N06L Rev. A4
PDM
0.05
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
4
10
100
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FDPF320N06L N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDPF320N06L N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF320N06L Rev. A4
5
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FDPF320N06L N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDPF320N06L Rev. A4
6
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FDPF320N06L N-Channel PowerTrench® MOSFET
Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
FDPF320N06L Rev. A4
7
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51
FDPF320N06L Rev. A4
8
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FDPF320N06L N-Channel PowerTrench® MOSFET
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