FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability TO-263AB FDB SERIES S RoHS Compliant Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C Pulsed Drain Current Single Pulse Avalanche Energy Ratings 600 Units V ±30 V 20 A See Figure4 A (Note 2) 217.8 mJ Power Dissipation 405 W Derate above 25oC 2.7 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 150 C Thermal Characteristics RθJC Thermal Resistance Junction to Case 0.37 RθJA Maximum Thermal Resistance Junction to Ambient (Note 3) 43 o C/W oC/W Package Marking and Ordering Information Device Marking FCB20N60F Device FCB20N60F_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 10mH, IAS = 6.6A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2012 Fairchild Semiconductor Corporation FCB20N60F_F085 Rev. C1 1 www.fairchildsemi.com FCB20N60F_F085 N-Channel Power Trench® MOSFET March 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 600V, VGS = 0V 600 - - V - - - - 10 500 μA - - ±100 nA 3.0 4.29 5.0 V - 171 195 mΩ - 444 511 mΩ TJ = 25oC TJ = 150oC(Note 4) VGS = ±30V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 20A, VGS= 10V TJ = 25oC TJ = 150oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 300V ID = 20A - 2305 - pF - 1310 - pF - 105 - pF - 0.95 - Ω - 78 102 nC - 6.6 8.6 nC - 13.8 - nC - 41.5 - nC Switching Characteristics ton Turn-On Time - - 176 ns td(on) Turn-On Delay Time - 43 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 66 - ns - 211 - ns Fall Time - 42 - ns Turn-Off Time - - 403 ns VDD = 300V, ID = 20A, VGS = 10V, RGS = 25Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 20A, VGS = 0V - - 1.4 V Trr Reverse Recovery Time - 163 - ns Qrr Reverse Recovery Charge IF = 20A, VDD = 480V dISD/dt = 100A/μs - 1285 - nC Notes: 4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. FCB20N60F_F085 Rev. C1 2 www.fairchildsemi.com FCB20N60F_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 30 1.0 I D, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 25 20 VGS = 10V 15 10 5 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance VGS = 10V TC = 25oC FOR TEMPERATURES I DM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FCB20N60F_F085 Rev. C1 3 www.fairchildsemi.com FCB20N60F_F085 N-Channel Power Trench® MOSFET Typical Characteristics 100 10 1 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) VGS = 0 V TJ = 175 oC 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Figure 8. Forward Diode Characteristics 100 I D, DRAIN CURRENT (A) 15V Top 10V 8V 7V 6.5V 6V 5.5V Bottom 10 6V 5.5V 80μs PULSE WIDTH Tj=175C 1 0.1 1 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics VGS 15V Top 10V 8V 7V 6.5V 6V 5.5V Bottom 10 80μs PULSE WIDTH Tj=25C FCB20N60F_F085 Rev. C1 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS 0.1 T J = 25 oC 10 0.001 0.0 Figure 7. Transfer Characteristics I D, DRAIN CURRENT (A) 100 IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) TJ = 25oC 100 10 Figure 6. Unclamped Inductive Switching Capability T J = -55oC 2 1 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 TJ = 175oC 1 0.1 1000 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX VDD = 20V 10 0.01 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 100 STARTING TJ = 150oC 1 1E-3 10ms DC 10 100 V DS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 100us 0.1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] I AS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FCB20N60F_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID = 20A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on) , DRAIN TO SOURCE ON-RESISTANCE (mΩ) 1000 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 800 TJ = 175oC 600 400 TJ = 25o C 200 0 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 2.0 1.6 1.2 ID = 20A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 2.4 1.2 VGS = VDS ID = 250μ A 1.0 1.1 0.8 1.0 0.6 0.9 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 10000 Ciss 1000 Coss 100 10 f = 1MHz VGS = 0V Crss 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 15. Capacitance vs Drain to Source Voltage FCB20N60F_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature V GS, GATE TO SOURCE VOLTAGE(V) Figure 13. Normalized Gate Threshold Voltage vs Temperature CAPACITANCE (pF) 2.8 Figure 12. Normalized Rdson vs Junction Temperature 1.2 1 0.1 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX 3.2 10 Figure 11. Rdson vs Gate Voltage 0.4 -80 3.6 10 ID = 20A V DD = 240V 8 VDD = 300V 6 VDD = 360V 4 2 0 0 20 40 60 Q g, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FCB20N60F_F085 N-Channel Power Trench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCB20N60F_F085 Rev. C1 6 www.fairchildsemi.com