FDD86102 N-Channel PowerTrench® MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) Application High power and current handling capability in a widely used surface mount package DC - DC Conversion Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant D D G G S D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 8 A 40 Single Pulse Avalanche Energy PD Units V 36 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 121 62 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.0 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86102 Device FDD86102 ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.C5 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET March 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 67 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.1 -8.5 mV/°C VGS = 10 V, ID = 8 A 19 24 VGS = 6 V, ID = 6 A 26 38 VGS = 10 V, ID = 8 A, TJ = 125 °C 33 44 VDS = 10 V, ID = 8 A 21 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 780 1035 pF 180 240 pF 15 25 pF Ω 0.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 8 A 7.6 15 ns 3 10 ns 13.4 24 ns 2.9 10 ns 13.4 19 nC 7.6 11 nC 4.0 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 43 68 ns 43 68 nC IF = 8 A, di/dt = 100 A/μs V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 96 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS 121 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 30 A. FDD86102 Rev.C5 2 www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 VGS = 8 V VGS = 6 V 20 VGS = 5 V 10 VGS = 4.5 V 0 0 1 2 3 4 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 5 VGS = 5 V 4 3 VGS = 6 V 2 1 0 5 0 10 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 150 oC TJ = 25 oC 3 4 50 TJ = 125 oC 40 30 TJ = 25 oC 20 4 6 8 10 50 VDS = 5 V 2 60 Figure 4. On-Resistance vs Gate to Source Voltage 20 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 ID = 8 A 70 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 30 40 80 ID = 8 A VGS = 10 V 40 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 -50 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0.6 -75 VGS = 10 V VGS = 8 V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = -55 oC 5 6 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD86102 Rev.C5 3 1.2 www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 8 A Ciss VDD = 25 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 100 2 0 0 3 6 9 12 10 0.1 15 f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics 10 100 Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 30 VGS = 10 V 20 VGS = 6 V 10 o RθJC = 2 C/W 1 0.001 0.01 0.1 1 10 0 25 30 50 150 P(PK), PEAK TRANSIENT POWER (W) 10000 10 100 us THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1 ms RθJC = 2 oC/W 10 ms DC TC = 25 oC 1 10 100 SINGLE PULSE RθJC = 2 oC/W TC = 25 oC 1000 100 50 -5 10 300 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDD86102 Rev.C5 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 0.1 100 Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 4 www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o 0.01 -5 10 RθJC = 2 C/W -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve FDD86102 Rev.C5 5 www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDD86102 Rev.C5 6 www.fairchildsemi.com FDD86102 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ Green Bridge™ BitSiC® QFET® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™