BETLUX BL-L813IRBC

INFRARED EMITTING DIODES
BL-L813XX-IR
Features:
8.0mm Round Type Infrared LED
High Reliability
Peak Wavelength at 940, 880, 850nm
Water Clear, yellow Transparent, Blue Transparent available
IC compatible /Low current capability.
Application
Free air transmission system
Infrared remote control units with high power requirement
Smoke detector
Infrared Camera
Infrared applied system
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=50mA)
m
o
c
Chip
Part Number
Material
λP
(nm)
BL-L813IRAC
GaAs
940
BL-L813IRAB
GaAs
940
BL-L813IRBC
GaAlAs
BL-L813IRBB
BL-L813IRCC
Lens Type
∆λ
Ir
(Vr=5V,
uA)
.
x
u
l
t
e
b
Water Clear
Forward
Voltage(VF)
Unit:V
Radiant
Power
(mw/sr)
Angle
2θ1/2(deg)
Typ
Max
Typ
1.40
1.60
20
50
10
Blue Trans.
50
10
1.40
1.60
20
880
Water Clear
50
10
1.70
2.00
20
GaAlAs
880
Blue Trans.
50
10
1.70
2.00
20
GaAlAs
850
Water Clear
50
10
1.70
2.00
30
.
w
w
w
BL-L813IRCB
GaAlAs
850
Blue Trans.
50
10
1.70
2.00
30
BL-L813IRCY
GaAlAs
850
Yellow Trans.
50
10
1.70
2.00
30
Viewing
30
Absolute maximum ratings (Ta=25°C)
Parameter
Rating
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
-40 to +80
Storage Temperature TSTG
-40 to +85
Lead Soldering Temperature
TSOL
Unit
50
150
5
mW
250
mA
Max.260 5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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mA
V
INFRARED EMITTING DIODES
BL-L813XX-IR
Package configuration & Internal circuit diagram
.
w
w
.
x
u
l
t
e
b
m
o
c
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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INFRARED EMITTING DIODES
BL-L813XX-IR
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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