BETLUX BL-LS1210UEUGC

SMD LED LAMP, BI-COLOR
BL-LS1210xx
Features:
3.2mmx2.7mm SMD, 1.1mm THICKNESS
BI-color type
Compatible with automatic placement equipment
WIDE VIEWING ANGLE.
IDEAL FOR BACKLIGHT AND INDICATOR.
PACKAGE: 3KPCS/REEL
RoHs Compliance
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Chip
Part Number
Emitted Color
BL-LS1210SGC
BL-LS1210UYUGC
λP
(nm)
w
m
o
c
.
x
lt u
Luminous
Intensity
(Iv)
Unit:mcd
Max
Min.
Typ.
1.85
2.20
5
18
2.30
2.70
6
15
2.10
2.60
4
8
2.30
2.70
6
15
2.10
2.60
20
70
GaAlAs
660
Green
GaP
568
Orange
GaAsP
640
Green
GaP
568
Ultra Yellow
AlInGaP
593
Ultra Green
AlInGaP
575
2.20
2.70
15
45
Ultra Orange
AlInGaP
645
2.10
2.60
22
80
Ultra Green
AlInGaP
575
2.20
2.70
15
45
Water
Clear
Viewi
Typ
Red
e
b
.
w
w
BL-LS1210EGC
BL-LS1210UEUGC
Material
Lens
Type
Forward
Voltage(VF)
Unit:V
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
TSOL
Angle
2θ1/2
(deg)
130
Absolute maximum ratings (Ta=25°C)
Parameter
ng
Rating
Unit
30
78
5
mA
mW
V
100
mA
-30 to +80
-40 to +85
°C
°C
Max.260 5
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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°C
SMD LED LAMP, BI-COLOR
BL-LS1210xx
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP, BI-COLOR
BL-LS1210xx
Tape Specifications
Unit:mm
Tolerance:±0.1
!"#
m
o
c
.
x
.
w
w
=;<
u
l
t
e
b
w
-./01 23456478 9:2434:7
$
%
$
)(*
&'
(
(
+
$
,
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP, BI-COLOR
BL-LS1210xx
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
>
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
@
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
?
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
@
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000