BETLUX BL-M07C571Y

LED DOT MATRIX
BL-M07X571
Features:
17.80mm (0.7”) Φ1.8 dot matrix LED display
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Super Bright
Electrical-optical characteristics: (Ta=25 )
(Test Condition: IF=20mA)
Part No
VF
Unit:V
Chip
Row
Cathode
Column Anode
Row Anode
Column Cathode
Emitted
Color
BL-M07C571S-XX
BL-M07D571S-XX
Hi Red
Super
Red
Ultra
Red
Typ
Max
TYP.(mcd)
GaAlAs/GaAs,SH
660
1.85
2.20
100
GaAlAs/GaAs,DH
660
GaAlAs/GaAs,DDH
660
BL-M07C571D-XX
BL-M07D571D-XX
BL-M07C571UR-XX
BL-M07D571UR-XX
BL-M07C571E-XX
BL-M07D571E-XX
Orange
GaAsP/GaP
BL-M07C571Y-XX
BL-M07D571Y-XX
Yellow
GaAsP/GaP
BL-M07C571G-XX
BL-M07D571G-XX
GaP/GaP
m
o
c
.
x
u
l
t
e
b
Green
Ultra Bright
Electrical-optical characteristics: (Ta=25 )
Iv
λP
(nm)
Material
635
585
570
1.85
2.20
110
1.85
2.20
120
2.10
2.50
90
2.10
2.50
90
2.20
2.50
85
(Test Condition: IF=20mA)
BL-M07C571UE-XX
.
w
w
BL-M07D571UE-XX
Ultra Orange
BL-M07C571YO-XX
BL-M07D571YO-XX
Ultra Amber
AlGaInP
619
2.10
2.50
100
BL-M07C571UY-XX
BL-M07D571UY-XX
Ultra Yellow
AlGaInP
590
2.10
2.50
100
BL-M07C571UG-XX
BL-M07D571UG-XX
Ultra Green
AlGaInP
574
2.20
2.50
130
BL-M07C571PG-XX
BL-M07D571PG-XX
Ultra Pure Green
InGaN
525
3.80
4.50
150
BL-M07C571B-XX
BL-M07D571B-XX
Ultra Blue
InGaN
470
2.70
4.20
70
BL-M07C571W-XX
BL-M07D571W-XX
Ultra White
InGaN
/
2.70
4.20
100
Part No
Row Cathode
Column Anode
w
BL-M07C571UHR-XX
Row Anode
Column Cathode
VF
Unit:V
Chip
Emitted Color
Material
Iv
λP
(nm)
Typ
Max
TYP.(mcd)
BL-M07D571UHR-XX
Ultra Red
AlGaInP
645
2.10
2.50
120
AlGaInP
630
2.10
2.50
100
·-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
1
2
3
4
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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5
LED DOT MATRIX
BL-M07X571
Absolute maximum ratings (Ta=25
)
Parameter
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
S
D
UR
E
Y
G
Unit
25
60
5
25
60
5
25
60
5
25
60
5
25
60
5
30
65
5
mA
mW
V
150
150
150
150
150
150
mA
Storage Temperature TSTG
-40 to +85
Lead Soldering Temperature
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
TSOL
Absolute maximum ratings (Ta=25°C)
Parameter
UHR
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
30
75
5
150
.
w
w
Lead Soldering Temperature
TSOL
-40 to +80
UE
YO
.
x
UY
30
65
5
30
65
5
30
65
5
150
150
150
m
o
c
UG
u
l
t
e
b
30
75
5
150
PG
B
W
U
nit
mA
30
110
5
30
120
5
30
120
5
mW
150
100
100
mA
-40 to +80
-40 to +85
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
w
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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V
LED DOT MATRIX
BL-M07X571
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M07X571
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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