BETLUX BL-M40A571YO

 LED DOT MATRIX
BL-M40X571
n
Ø
Ø
Ø
Ø
Ø
Ø
Features:
106.50mm (4.0”) F10.0 dot matrix LED display.
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Super Bright
Electrical-optical characteristics: (Ta=25℃)
(Test Condition: IF=20mA)
Part No
Chip
Row
Cathode
Column Anode
Row Anode
Column Cathode
Emitted
Color
BL-M40A571S-XX
BL-M40B571S-XX
Hi Red
Super
Red
Ultra
Red
VF
Unit:V
Iv
λP
(nm)
Typ
Max
TYP.(mcd)
GaAlAs/GaAs,SH
660
1.85
2.20
155
GaAlAs/GaAs,DH
660
1.85
2.20
180
GaAlAs/GaAs,DDH
660
1.85
2.20
230
Material
BL-M40A571D-XX
BL-M40B571D-XX
BL-M40A571UR-XX
BL-M40B571UR-XX
BL-M40A571E-XX
BL-M40B571E-XX
Orange
GaAsP/GaP
635
2.10
2.50
120
BL-M40A571Y-XX
BL-M40B571Y-XX
Yellow
GaAsP/GaP
585
2.10
2.50
120
BL-M40A571G-XX
BL-M40B571G-XX
Green
GaP/GaP
570
2.20
2.50
140
Ultra Bright
Electrical-optical characteristics: (Ta=25℃)
(Test Condition: IF=20mA)
Part No
VF
Unit:V
Chip
Iv
Material
λP
(nm)
Typ
Max
TYP.(mcd)
Ultra Red
AlGaInP
645
2.10
2.50
230
BL-M40B571UE-XX
Ultra Orange
AlGaInP
630
2.10
2.50
170
BL-M40B571YO-XX
Ultra Amber
AlGaInP
619
2.10
2.50
170
BL-M40A571UY-XX
BL-M40B571UY-XX
Ultra Yellow
AlGaInP
590
2.10
2.50
170
BL-M40A571UG-XX
BL-M40B571UG-XX
Ultra Green
AlGaInP
574
2.20
2.50
200
BL-M40A571PG-XX
BL-M40B571PG-XX
Ultra Pure Green
InGaN
525
3.80
4.50
250
BL-M40A571B-XX
BL-M40B571B-XX
Ultra Blue
InGaN
470
2.70
4.20
120
BL-M40A571W-XX
BL-M40B571W-XX
Ultra White
InGaN
/
2.70
4.20
200
Row Cathode
Column Anode
Row Anode
Column Cathode
BL-M40A571UHR-XX
BL-M40B571UHR-XX
BL-M40A571UE-XX
BL-M40A571YO-XX
·-XX: Surface / Lens color:
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
Emitted Color
1
2
3
4
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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5
LED DOT MATRIX
BL-M40X571
Absolute maximum ratings (Ta=25℃ )
Parameter
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
S
D
UR
E
Y
G
Unit
25
60
5
25
60
5
25
60
5
25
60
5
25
60
5
30
65
5
mA
mW
V
150
150
150
150
150
150
mA
-40 to +80
℃
-40 to +85
℃
Max.260±5℃ for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
℃
Storage Temperature TSTG
Lead Soldering Temperature
T SOL
n
Absolute maximum ratings (Ta=25°C)
Parameter
UHR
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
T SOL
UE
YO
UY
UG
PG
B
W
U
nit
mA
30
75
5
30
65
5
30
65
5
30
65
5
30
75
5
30
110
5
30
120
5
30
120
5
mW
150
150
150
150
150
150
100
100
mA
V
-40 to +80
-40 to +85
℃
Ma x.260±5℃ for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
℃
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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℃
LED DOT MATRIX
BL-M40X571
■ Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M40X571
■ Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(λ p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
3.0
2.0
1.0
0
20
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
0.2
4
3
2
-20
-10
0
10
20
30
40
50
60
80
100
4
3
2
70
1
AMBIENT TEMPERATURE Ta(℃ )
60
30KHz
3KHz
300Hz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak M AX.
IDC MAX.
0.5
40
AMBIENT TEMPERATURE Ta(℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
3KHz
300KHz
1KHz
100KHz F-REFRESH RATE
10 10KHz
9
8
7
6
5
1
5
4
2
3
0.1
-30
40
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
Ipeak MAX.
IDC MAX.
REL ATIVE LUMIN OU S IN TENSITY
1
5
B
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
3
2
50
1
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
NOTE:25℃ free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000