September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS D D S G S T A = 25°C unless otherwise noted NDT014 Units Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current ±2.7 A - Continuous (Note 1a) - Pulsed PD Maximum Power Dissipation ±10 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG Operating and Storage Temperature Range W 1.1 -65 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT014 Rev. C1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 25 µA VDS = 48 V, VGS = 0 V, TJ=125°C 250 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA 3 4 V 0.2 Ω ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.6 A 0.18 gFS Forward Transconductance VDS = 25 V, ID = 1.6 A 2 VDS = 25 V, VGS = 0 V, f = 1.0 MHz 155 pF 60 pF 15 pF S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD =30 V, ID = 10 A, VGEN = 10 V, RGEN = 24 Ω VDS = 48 V, ID = 10 A, VGS = 10 V 10 20 ns 64 100 ns 10 20 ns 10 20 ns 5 11 nC 1.2 3.1 nC 2 5.8 nC NDT014 Rev. C1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 2.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.7A trr Reverse Recovery Time VGS = 0 V, IF = 10 A, dIF/dt = 100 A/µs 0.95 (Note 2) 1.6 V 140 ns Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD( t) = T J−TA R θJ A(t ) = T J−TA R θJ C+RθCA(t ) = I 2D (t ) × RDS(ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT014 Rev. C1 Typical Electrical Characteristics 8 2.5 V = 10V VGS = 5.5V 8.0 7.0 R DS(on), NORMALIZED 6 6.5 4 6.0 5.5 2 5.0 4.5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) GS 0 0 1 V DS 2 3 , DRAIN-SOURCE VOLTAGE (V) 8.0 1.5 10 1 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 3 I D = 2.7A 1.8 V G S = 10V R DS(ON), NORMALIZED 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 7.0 0 2 DRAIN-SOURCE ON-RESISTANCE 6.5 0.5 4 Figure 1. On-Region Characteristics. TJ = 125°C 2 1.5 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 150 25°C 1 -55°C 0.5 0 -25 VGS = 10 V 2.5 0 2 I J D 4 6 , DRAIN-CURRENT(A) 8 10 Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 10 125°C V th , NORMALIZED 8 6 4 2 0 2 4 V GS 6 8 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 GATE-SOURCE THRESHOLD VOLTAGE 25°C TJ = -55°C V DS = 10V I D, DRAIN CURRENT (A) 6.0 2 V DS = V GS ID = 250µA 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDT014 Rev. C1 Typical Electrical Characteristics (continued) 10 I D = 250µA 5 I S, REVERSE DRAIN CURRENT (A) , NORMALIZED DSS BV DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 V GS = 0 V 1 0.5 T J = 125°C 25°C 0.1 -55°C 0.01 0.001 0.2 150 V 300 1 1.2 VDS = 10V , GATE-SOURCE VOLTAGE (V) I D = 2.7A 200 C iss 100 C oss 50 1.4 10 0.1 0.2 40V 9 6 C rss 3 V V GS = 0 V 20V 12 GS f = 1 MHz 20 0 0.5 1 2 5 10 20 50 0 1 2 V DS , DRAIN TO SOURCE VOLTAGE (V) t on t d(on) 5 t d(off) tf 90% 90% V OUT VOUT 10% 10% DUT G 6 t off tr RL D R GEN 4 Figure 10. Gate Charge Characteristics. VDD V IN 3 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. VGS 0.8 , BODY DIODE FORWARD VOLTAGE (V) 15 400 CAPACITANCE (pF) 0.6 SD Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 30 0.4 INVERTED 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT014 Rev. C1 Typical Electrical Characteristics (continued) 20 T J = -55°C VDS = 1 0 V 5 ID , DRAIN CURRENT (A) 3 10 1 m 0us s 10 25°C 125°C 2 1 2 RD S( ON )L I T MI 10 10 1 0.1 0.05 m 0m 1s 10 s DC 0.5 s s VGS = 10V SINGLE PULSE RθJ A = 42 o C/W FS , TRANSCONDUCTANCE (SIEMENS) 4 g TA = 25°C 0 0 2 4 I D 6 8 10 0.01 0.1 0.2 , DRAIN CURRENT (A) Figure 13. Transconductance Variation with Drain Current and Temperature. 0.5 1 2 5 10 VDS , DRAIN-SOURCE VOLTAGE (V) 30 60 100 Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) 0.01 t1 0.005 (t) θJA Duty Cycle, D = t 1 / t 2 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT014 Rev. C1 SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F852 014 F852 014 F852 014 F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 D84Z SOT-223 Unit Orientation TNR 500 13" Dia 7" Dia 343x64x343 184x187x47 Max qty per Box 5,000 1,000 Weight per unit (gm) 0.1246 0.1246 Weight per Reel (kg) 0.7250 0.1532 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for D84Z Option SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: PN2222A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.