CENTRAL CBRHDSH2-100

CBRHDSH2-100
SURFACE MOUNT SILICON
HIGH DENSITY
2.0 AMP DUAL IN LINE
SCHOTTKY BRIDGE RECTIFIER
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH2-100
is a full wave bridge rectifier mounted in a durable
epoxy surface mount case, utilizing glass passivated
chips.
MARKING CODE: CSH10
FEATURES:
HD DIP CASE
• Device is Halogen Free by design
• Low Leakage Current (700nA TYP @ VRRM)
• High 2.0A Current Rating
• Low VF Schottky Diodes (840mV MAX @ IF=2.0A)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
100
UNITS
V
DC Blocking Voltage
VR
100
V
VR(RMS)
IO
70
V
2.0
A
RMS Reverse Voltage
Average Forward Current, TA=75°C
Peak Forward Surge Current (8.3ms)
50
A
Operating Junction Temperature Range
IFSM
TJ
-50 to +125
°C
Storage Temperature Range
Tstg
-50 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
IR
VR=100V
0.70
4.0
UNITS
µA
VF
VF
IF=500mA
IF=1.0A
610
mV
700
mV
VF
CJ
IF=2.0A
VR=4.0V, f=1.0MHz
770
840
mV
250
pF
R2 (8-October 2009)
Central
CBRHDSH2-100
TM
SURFACE MOUNT SILICON
HIGH DENSITY
2.0 AMP DUAL IN LINE
SCHOTTKY BRIDGE RECTIFIER
Semiconductor Corp.
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH10
R2 (8-October 2009)
Central
TM
Semiconductor Corp.
CBRHDSH2-100
SURFACE MOUNT SILICON
HIGH DENSITY
2.0 AMP DUAL IN LINE
SCHOTTKY BRIDGE RECTIFIER
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (8-October 2009)