Central CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CET3904E / CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP™, these components provide performance characteristics suitable for the most demanding size constrained applications. Top View Bottom View SOT-883L CASE MARKING CODES: CET3904E: C CET3906E: D FEATURES: • Device is Halogen Free by design • Power Dissipation 250mW APPLICATIONS: • Low VCE(SAT) 0.1V Typ @ 50mA • DC / DC Converters • Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including Low Profile, Surface Mount Package Cell Phones and Digital Cameras ♦ MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL Collector-Emitter Voltage ♦ Emitter-Base Voltage Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) VCBO 60 V VCEO 40 V VEBO 6.0 V IC 200 mA PD PD TJ, Tstg 250 430 -65 to +150 mW mW °C ΘJA ΘJA 500 °C/W 290 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN ♦ ♦ SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) ♦ Enhanced specification ♦ TEST CONDITIONS VCE=30V, VEB=3.0V IC=10μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA UNITS MIN TYP PNP TYP 60 40 6.0 115 60 7.5 0.057 90 55 7.9 0.050 MAX 50 0.100 UNITS nA V V V V Notes: (1) FR-4 epoxy PC board, standard mounting conditions (2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2 R1 (5-MAY 2008) Central CET3904E NPN CET3906E PNP TM Semiconductor Corp. ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: ♦ ♦ ♦ ♦ SYMBOL VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie hre hfe hoe NF td tr ts tf ♦ TEST CONDITIONS MIN IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA 0.65 IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA 90 VCE=1.0V, IC=1.0mA 100 VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=50mA 70 VCE=1.0V, IC=100mA 30 VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz 1.0 VCE=10V, IC=1.0mA, f=1.0kHz 0.1 VCE=10V, IC=1.0mA, f=1.0kHz 100 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 VCE=5.0V, IC=100μA, RS =1.0KΩ, f=10Hz to 15.7kHz VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA NPN TYP 0.100 0.75 0.85 240 235 215 110 50 PNP TYP 0.100 0.75 0.85 130 150 150 120 55 MAX 0.200 0.85 0.95 UNITS V V V 300 4.0 8.0 12 10 400 60 4.0 35 35 200 50 MHz pF pF kΩ X10-4 μS dB ns ns ns ns Enhanced specification SOT-883L - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R1 (5-MAY 2008)