Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. • Device is Halogen Free by design MARKING CODE: CR SOT-963 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current (tp < 5s) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Power Dissipation: 125mW • Low Package Profile: 0.5mm (MAX) • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small SOT-963 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS IGSSF VGS=5.0V, VDS=0V IGSSR VGS=5.0V, VDS=0V IDSS VDS=5.0V, VGS=0V IDSS VDS=16V, VGS=0V BVDSS VGS=0V, ID=250μA VGS(th) VDS=VGS, ID=250μA rDS(ON) VGS=4.5V, ID=100mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=1.8V, ID=20mA rDS(ON) VGS=1.5V, ID=10mA rDS(ON) VGS=1.2V, ID=1mA VDS=5.0V, ID=125mA gFS Crss VDS=15V, VGS=0V, f=1.0MHz Ciss VDS=15V, VGS=0V, f=1.0MHz Coss VDS=15V, VGS=0V, f=1.0MHz ton VDD=10V, VGS=4.5V, ID=200mA toff VDD=10V, VGS=4.5V, ID=200mA UNITS V V mA mA mW °C °C/W 20 8.0 160 200 125 -65 to +150 1000 (TA=25°C unless otherwise noted) MIN TYP MAX 100 100 50 100 20 0.4 1.0 1.5 3.0 2.0 4.0 3.0 6.0 4.0 10 7.0 1.3 2.2 9.0 3.0 40 150 UNITS nA nA nA nA V V Ω Ω Ω Ω Ω S pF pF pF ns ns R2 (25-February 2009) Central CMRDM3590 TM Semiconductor Corp. SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-963 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) DRAIN Q2 4) SOURCE Q2 5) GATE Q2 6) DRAIN Q1 MARKING CODE: CR R2 (25-February 2009)