CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CHM2342PT CURRENT 4.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * N-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 0~0.1 0.3~0.6 D (3) CIRCUIT 2.1~2.95 (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM2342PT VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Drain Current - Continuous 4.2 ID Units V V A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 15 1250 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 100 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2008-05 RATING CHARACTERISTIC CURVES ( CHM2342PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 40 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 3.0 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA 1.0 VGS=10V, ID=4.2A 37 45 VGS=4.5V, ID=3.3A 44 58 mΩ Dynamic Characteristics Ciss 680 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0 MHz 110 pF 65 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=20V, ID=4.2A VGS=10V 13.5 18 nC 1.7 2.8 t on Turn-On Time V DD= 20V 11 25 tr Rise Time I D = 4.2A , VGS = 10 V 3 10 t off Turn-Off Time RGEN= 3 Ω 26 55 tf Fall Time 3 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.25A , VGS = 0 V (Note 2) (Note 1) 4.2 A 1.2 V