A Product Line of Diodes Incorporated DMN3024LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 7.2A 36mΩ @ VGS= 4.5V 5.8A • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) 30V Mechanical Data • Case: SO-8 Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) • Motor control • Backlighting • DC-DC Converters • Power management functions S1 D1 G1 D1 S2 D2 G2 D2 TOP VIEW Ordering Information Product DMN3024LSD-13 Note: D1 G1 D2 G2 S1 S2 Top view (Note 1) Marking N3024LD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information N3024LD YY WW DMN3024LSD Document Revision: 3 N3024LD = Product Type Marking Code = Manufacturer’s Marking YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage (Notes 3 & 5) TA = 70°C (Notes 3 & 5) Continuous Drain current VGS = 10V (Notes 2 & 5) (Notes 2 & 6) (Notes 4 & 5) Pulsed Drain current VGS= 10V Continuous Source current (Body diode) (Notes 3 & 5) Pulsed Source current (Body diode) (Notes 4 & 5) ID IDM IS ISM Value 30 ±20 7.2 5.8 5.7 6.8 34 3.3 34 Unit V V Value 1.3 10.0 1.8 14.3 2.0 15.9 100 70 63 53 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 2 & 5) Power dissipation Linear derating factor (Notes 2 & 6) PD (Notes 3 & 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) (Notes 5 & 7) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition. DMN3024LSD Document Revision: 3 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD Thermal Characteristics ID Drain Current (A) RDS(on) Limited 10 1 DC 100m 1s 100ms 10m 1m 100m 10ms Single Pulse Tamb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) Max Power Dissipation (W) 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 110 Tamb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 Single Pulse D=0.2 30 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Maximum Power (W) Thermal Resistance (°C/W) 80 100 120 140 160 Derating Curve Single Pulse Tamb=25°C 100 One active die 10 1 100µ Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Revision: 3 60 Temperature (°C) Safe Operating Area DMN3024LSD 40 3 of 8 www.diodes.com Pulse Power Dissipation July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.024 VGS= 10V, ID= 7.0A RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 8 & 9) gfs ⎯ 16.5 ⎯ S VDS= 15V, ID= 7.1A Diode Forward Voltage (Note 8) VSD ⎯ 0.82 1.2 V IS= 1.7A, VGS= 0V Reverse recovery time (Note 9) trr 12 ⎯ ns Reverse recovery charge (Note 9) Qrr ⎯ 4.8 ⎯ nC Input Capacitance Ciss ⎯ 608 ⎯ pF Output Capacitance Coss ⎯ 132 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 71 ⎯ pF Total Gate Charge Qg ⎯ 6.3 ⎯ nC Static Drain-Source On-Resistance (Note 8) 0.036 Ω VGS= 4.5V, ID= 6.0A IS= 2.2A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 9) Total Gate Charge Qg ⎯ 12.9 ⎯ nC Gate-Source Charge Qgs ⎯ 2.5 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 2.9 ⎯ ns Turn-On Rise Time (Note 10) tr ⎯ 3.3 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 16 ⎯ ns tf ⎯ 8 ⎯ ns Turn-Off Fall Time (Note 10) Notes: VDS= 15V, VGS= 0V f= 1MHz VDS= 15V, VGS= 4.5V ID= 7A VDS= 15V, VGS= 10V ID= 7A VDD= 15V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. DMN3024LSD Document Revision: 3 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD Typical Characteristics 5V ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 10 3V 2.5V 1 2V 0.1 1.5V 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) DMN3024LSD Document Revision: 3 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V 1.4 ID = 7A RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD Typical Characteristics - continued VGS = 0V C Capacitance (pF) 800 f = 1MHz 700 600 CISS 500 COSS 400 CRSS 300 200 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 900 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN3024LSD Document Revision: 3 Switching time test circuit 6 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD h x 45° Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMN3024LSD Document Revision: 3 7 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMN3024LSD Document Revision: 3 8 of 8 www.diodes.com July 2009 © Diodes Incorporated