TC1054/TC1055/TC1186 50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output Features • Extremely Low Ground Current for Longer Battery Life • Very Low Dropout Voltage • Choice of 50mA (TC1054), 100mA (TC1055) and 150mA (TC1186) Output • High Output Voltage Accuracy • Standard or Custom Output Voltages • Power-Saving Shutdown Mode • ERROR Output Can Be Used as a Low Battery Detector, or Processor Reset Generator • Over Current and Over Temperature Protection • Space-Saving 5-Pin SOT-23A Package • Pin Compatible Upgrades for Bipolar Regulators Applications • • • • • • • Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers Device Selection Table Part Number Package Junction Temp. Range TC1054-xxVCT 5-Pin SOT-23A -40°C to +125°C TC1055-xxVCT 5-Pin SOT-23A -40°C to +125°C TC1186-xxVCT 5-Pin SOT-23A -40°C to +125°C NOTE: xx indicates output voltages Available Output Voltages: 1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0. Other output voltages are available. Please contact Microchip Technology Inc. for details. Package Type 5-Pin SOT-23A VOUT ERROR 5 4 TC1054 TC1055 TC1186 1 2 3 VIN GND SHDN NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A) 2002 Microchip Technology Inc. DS21350B-page 1 TC1054/TC1055/TC1186 General Description The TC1054, TC1055 and TC1186 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation, very low dropout voltage – typically 85mV (TC1054); 180mV (TC1055); and 270mV (TC1186) at full load — and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5µA (max) and both V OUT and ERROR are disabled when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. Typical Application VIN 1 2 VIN VOUT 5 VOUT + TC1054 TC1055 TC1186 1µF GND 3 4 SHDN ERROR ERROR Shutdown Control (from Power Control Logic) The TC1054, TC1055 and TC1186 are stable with an output capacitor of only 1µF and have a maximum output current of 50mA, 100mA and 150mA, respectively. For higher output current regulators, please see the TC1173 (IOUT = 300mA) data sheet. DS21350B-page 2 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN + 0.3V) Power Dissipation ............... Internally Limited (Note 6) Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V Operating Temperature Range ......-40°C < TJ < 125°C Storage Temperature ......................... -65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max V IN Input Operating Voltage 2.7 — 6.0 V Note 8 IOUTMAX Maximum Output Current 50 100 150 — — — — — — mA TC1054 TC1055 TC1186 VOUT Output Voltage TCVOUT VOUT Temperature Coefficient ∆VOUT/∆VIN Line Regulation ∆VOUT/VOUT Load Regulation V IN-V OUT Dropout Voltage VR – 2.5% VR ±0.5% VR + 2.5% Units Test Conditions V Note 1 — — 20 40 — — ppm/°C Note 2 — 0.05 0.35 % (VR + 1V) ≤ VIN ≤ 6V TC1054; TC1055 TC1186 — — 0.5 0.5 2 3 % IL = 0.1mA to IOUTMAX IL = 0.1mA to IOUTMAX (Note 3) 2 65 85 180 270 — — 120 250 400 mV TC1055; TC1186 TC1186 — — — — — IL = 100µA IL = 20mA IL = 50mA IL = 100mA IL = 150mA (Note 4) IIN Supply Current — 50 80 µA SHDN = VIH, IL = 0 IINSD Shutdown Supply Current — 0.05 0.5 µA SHDN = 0V PSRR Power Supply Rejection Ratio — 64 — dB FRE ≤ 1kHz IOUTSC Output Short Circuit Current — 300 450 mA VOUT = 0V ∆VOUT/∆PD Thermal Regulation — 0.04 — V/W Notes 5, 6 TSD Thermal Shutdown Die Temperature — 160 — °C ∆TSD Thermal Shutdown Hysteresis — 10 — °C Output Noise — 260 — nV/√Hz eN Note 1: 2: 3: 4: 5: 6: 7: 8: IL = IOUT MAX VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX . 2002 Microchip Technology Inc. DS21350B-page 3 TC1054/TC1055/TC1186 TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATION S (CONTINUED) Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, C L = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units Test Conditions SHDN Input VIH SHDN Input High Threshold 45 — — %VIN VIN = 2.5V to 6.5V VIL SHDN Input Low Threshold — — 15 %VIN VIN = 2.5V to 6.5V ERROR Output VINMIN Minimum VIN Operating Voltage 1.0 — — V VOL Output Logic Low Voltage — — 400 mV VTH ERROR Threshold Voltage — 0.95 x VR — V VHYS ERROR Positive Hysteresis — 50 — mV Note 1: 2: 3: 4: 5: 6: 7: 8: 1 mA Flows to ERROR See Figure 3-2 Note 7 VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN )x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to I OUT MAX. DS21350B-page 4 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (5-Pin SOT-23A) Symbol 1 VIN Description Unregulated supply input. 2 GND 3 SHDN Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5µA (max). 4 ERROR Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-oftolerance by approximately – 5%. 5 VOUT 2002 Microchip Technology Inc. Ground terminal. Regulated voltage output. DS21350B-page 5 TC1054/TC1055/TC1186 3.0 DETAILED DESCRIPTION 3.1 ERROR Open Drain Output The TC1054, TC1055 and TC1186 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1054, TC1055 and TC1186 supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0mA to IOUTMAX operating load current range, (an important consideration in RTC and CMOS RAM battery back-up applications). ERROR is driven low whenever VOUT falls out of regulation by more than – 5% (typical). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR threshold is 5% below rated VOUT regardless of the programmed output voltage value (e.g. ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 3-2. Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05µA (typical), VOUT falls to zero volts, and ERROR is opencircuited. Note that ERROR is active when VOUT falls to VTH, and inactive when VOUT rises above VTH by V HYS. FIGURE 3-1: TYPICAL APPLICATION CIRCUIT VIN + 1µF + Battery VOUT TC1054 TC1055 TC1186 VOUT As shown in Figure 3-1, ERROR can be used as a battery low flag, or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 msec to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). FIGURE 3-2: ERROR OUTPUT OPERATION VOUT + 1µF C1 HYSTERESIS (VH) VTH GND ERROR VIH V+ SHDN Shutdown Control (to CMOS Logic or Tie to VIN if unused) DS21350B-page 6 ERROR C2 Required Only if ERROR is used as a Processor RESET Signal (See Text) VOL R1 1M BATTLOW or RESET 0.2µF C2 3.2 Output Capacitor A 1µF (min) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5.0Ω, and a resonant frequency above 1MHz. A 1µF capacitor should be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 4.0 THERMAL CONSIDERATIONS 4.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 4.2 Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN = 2.7V – 2.5% ILOADMAX = 40mA Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION 4-1: PD ≈ (VINMAX – VOUTMIN)ILOADMAX Where: PD VINMAX VOUTMIN ILOADMAX = 3.0V ±5% TJMAX = 125°C TAMAX = 55°C Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = [(3.0 x 1.05) – (2.7 x .975)]40 x 10–3 = 20.7mW Maximum allowable power dissipation: = Worst case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current PDMAX = (TJMAX – TAMAX) θJA = (125 – 55) 220 = 318mW The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 5-Pin SOT-23A package has a θJA of approximately 220°C/Watt. In this example, the TC1054 dissipates a maximum of 20.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits. EQUATION 4-2: 4.3 PDMAX= (TJMAX – TAMAX) θJA Where all terms are previously defined. 2002 Microchip Technology Inc. Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θJA and therefore, increase the maximum allowable power dissipation limit. DS21350B-page 7 TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.020 DROPOUT VOLTAGE (V) 0.018 Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA 0.090 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.100 DROPOUT VOLTAGE (V) Note: CIN = 1µF COUT = 1µF -40 0.200 0 20 50 TEMPERATURE (°C) 70 0.060 0.050 0.040 0.030 0.020 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.300 ILOAD = 100mA 0.120 0.100 0.080 0.060 0.040 CIN = 1µF COUT = 1µF 0 20 50 TEMPERATURE (°C) 70 125 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.250 0.200 0.150 0.100 0.050 CIN = 1µF COUT = 1µF 0.000 0.000 -40 -20 0 20 50 70 -40 125 TEMPERATURE (°C) Ground Current vs. VIN (VOUT = 3.3V) 90 ILOAD = 10mA 80 70 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 -20 0 20 50 TEMPERATURE (°C) DS21350B-page 8 125 ILOAD = 100mA 70 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 70 Ground Current vs. VIN (VOUT = 3.3V) 80 GND CURRENT (µA) GND CURRENT (µA) -20 ILOAD = 150mA 0.140 90 CIN = 1µF COUT = 1µF -40 0.160 0.020 0.070 0.000 125 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.180 -20 ILOAD = 50mA 0.080 0.010 0.000 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) Ground Current vs. VIN (VOUT = 3.3V) 80 ILOAD = 0 ILOAD = 150mA 3 60 2.5 50 VOUT (V) GND CURRENT (µA) 70 VOUT vs. VIN (VOUT = 3.3V) 3.5 40 30 2 1.5 1 20 CIN = 1µF COUT = 1µF 10 0.5 0 CIN = 1µF COUT = 1µF 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 4 4.5 5 5.5 6 6.5 7 Output Voltage vs. Temperature (VOUT = 3.3V) 3.320 ILOAD = 100mA 3.0 2 2.5 3 3.5 VIN (V) VOUT vs. VIN (VOUT = 3.3V) 3.5 0.5 1 1.5 ILOAD = 10mA 3.315 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 3.285 0.5 CIN = 1µF COUT = 1µF 0.0 0 3.290 3.288 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) CIN = 1µF COUT = 1µF VIN = 4.3V 3.280 3.275 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA VOUT (V) 3.286 3.284 3.282 3.280 3.278 3.276 CIN = 1µF COUT = 1µF VIN = 4.3V 3.274 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) 2002 Microchip Technology Inc. DS21350B-page 9 TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) Output Voltage vs. Temperature (VOUT = 5V) 5.025 5.015 4.990 4.988 5.010 4.986 5.005 5.000 4.995 4.990 4.985 4.984 4.982 4.980 4.978 VIN = 6V CIN = 1µF COUT = 1µF -40 ILOAD = 150mA 4.992 VOUT (V) VOUT (V) 5.020 Output Voltage vs. Temperature (VOUT = 5V) 4.994 ILOAD = 10mA VIN = 6V CIN = 1µF COUT = 1µF 4.976 -20 -10 0 20 40 85 4.974 125 -40 -20 -10 TEMPERATURE (°C) GND CURRENT (µA) 60 Temperature vs. Quiescent Current (VOUT = 5V) ILOAD = 10mA 70 50 40 30 20 10 50 40 30 20 VIN = 6V CIN = 1µF COUT = 1µF -40 -10 0 20 40 TEMPERATURE (°C) 85 -20 -10 125 -30 -35 COUT = 1µF to 10µF -40 100 -45 10 1 Stable Region PSRR (dB) 1.0 20 40 85 125 Power Supply Rejection Ratio Stability Region vs. Load Current RLOAD = 50Ω COUT = 1µF CIN = 1µF 0 TEMPERATURE (°C) 1000 COUT ESR (Ω) NOISE (µV/√Hz) 125 0 Output Noise vs. Frequency 10.0 85 ILOAD = 150mA 0 -20 40 60 10 VIN = 6V CIN = 1µF COUT = 1µF -40 20 Temperature vs. Quiescent Current (VOUT = 5V) 80 GND CURRENT (µA) 70 0 TEMPERATURE (°C) -50 IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1µF -55 -60 -65 0.1 -70 0.1 -75 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) DS21350B-page 10 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Measure Rise Time of 3.3V LDO Measure Fall Time of 3.3V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 184µS Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 52µS VSHDN VSHDN VOUT VOUT Measure Rise Time of 5.0V LDO Measure Fall Time of 5.0V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 192µS Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 88µS VSHDN VSHDN VOUT VOUT Thermal Shutdown Response of 5.0V LDO Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF VOUT ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. 2002 Microchip Technology Inc. DS21350B-page 11 TC1054/TC1055/TC1186 6.0 PACKAGING INFORMATION 6.1 Package Marking Information “1” & “2” = part number code + temperature range and voltage (V) TC1054 Code TC1055 Code TC1186 Code 1.8 CY DY PY 2.5 C1 D1 P1 2.7 C2 D2 P2 2.8 CZ DZ PZ 2.85 C8 D8 P8 3.0 C3 D3 P3 3.3 C5 D5 P5 3.6 C9 D9 P9 4.0 C0 D0 P0 5.0 C7 D7 P7 “3” represents year and quarter code “4” represents lot ID number 6.2 Taping Form Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package 5-Pin SOT-23A DS21350B-page 12 Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 6.3 Package Dimensions SOT-23A-5 .075 (1.90) REF. .071 (1.80) .059 (1.50) .122 (3.10) .098 (2.50) .020 (0.50) .012 (0.30) PIN 1 .037 (0.95) REF. .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .010 (0.25) .004 (0.09) 10° MAX. .024 (0.60) .004 (0.10) Dimensions: inches (mm) 2002 Microchip Technology Inc. DS21350B-page 13 TC1054/TC1055/TC1186 NOTES: DS21350B-page 14 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 SALES AND SUPPORT Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21350B-page 15 TC1054/TC1055/TC1186 NOTES: DS21350B-page 16 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. 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Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. 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B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 San Jose China - Hong Kong SAR Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 New York Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 *DS21350B* DS21350B-page 18 2002 Microchip Technology Inc.