FREESCALE MRF21125R3

Freescale Semiconductor
Technical Data
Document Number: MRF21125
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21125R3
MRF21125SR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance for VDD = 28 Volts, IDQ =
1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =
3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in
3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — - 43 dBc
ACPR — - 45 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 125 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF21125R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF21125SR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.53
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF21125R3 MRF21125SR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
10.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 μA)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 1300 mA)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
—
0.12
—
Vdc
Crss
—
5.4
—
pF
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
η
17
18
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
IM3
—
- 43
- 40
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to
carrier channel power.)
ACPR
—
- 45
- 40
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
IRL
—
- 12
- 9.0
dB
1. Part internally matched both on input and output.
(continued)
MRF21125R3 MRF21125SR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
34
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 30
—
dBc
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz)
η
—
46
—
%
Typical Two - Tone Performance (In Freescale Test Fixture)
Typical CW Performance
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
3
B1
R4
VGG
R1
R3
+
R2
+
C2
C3
+
C4
C5
C6
Z6
RF
INPUT
Z1
Z2
Z3
Z4
C7
C8
C9
C10
+
C11
+
+
C12
C13
C14
Z7
Z5
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
VDD
W1
Z8
Z9
Z10
Z11
C15
DUT
1.212″ x 0.082″ Microstrip
0.236″ x 0.082″ Microstrip
0.086″ x 0.254″ Microstrip
0.357″ x 0.082″ Microstrip
0.274″ x 1.030″ Microstrip
0.466″ x 0.050″ Microstrip
0.501″ x 0.050″ Microstrip
Z13
Z12
Z8
Z9
Z10
Z11
Z12
Z13
PCB
RF
OUTPUT
C16
0.600″ x 1.056″ Microstrip
0.179″ x 0.219″ Microstrip
0.100″ x 0.336″ Microstrip
0.534″ x 0.142″ Microstrip
0.089″ x 0.080″ Microstrip
0.620″ x 0.080″ Microstrip
Arlon GX0300 - 55- 22, 0.030″, εr = 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 5. MRF21125 Test Circuit Component Designations and Values
Designators
Description
B1
Ferrite Bead (Square), Fair Rite #2743019447
C1
9.1 pF Chip Capacitor, ATC #100B9R1CCA500X
C2, C4, C11, C12
22 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C3, C7
20000 pF Chip Capacitors, ATC #100B203JCA50X
C5, C14
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
C6
100000 pF Chip Capacitor, ATC #100B104JCA50X
C8
10000 pF Chip Capacitor, ATC #100B103JCA50X
C9
7.5 pF Chip Capacitor, ATC #100B7R5CCA500X
C10
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
C13
0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS
C15
16 pF Chip Capacitor, ATC #100B160KP500X
C16
0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
560 kΩ, 1/8 W Chip Resistor
R3
4.7 Ω, 1/8 W Chip Resistor
R4
12 Ω, 1/8 W Chip Resistor
W1
Solid Copper Buss Wire, 16 AWG
MRF21125R3 MRF21125SR3
4
RF Device Data
Freescale Semiconductor
VGG
V DD
C11
C9 C10
B1
R1
R2
R3
C5
C8 R4
C7
C6
C12
W1
C13
C2 C3 C4
C14
C15
C1
C16
MRF21125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21125 Test Circuit Component Layout
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
5
−20
3.84 MHz
Channel BW
−40
−50
(dB)
−60
−70
−80
−90
−100
−110
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
−120
30
IM3
5
η
42
128
Pout
112
P1dB = 135 W
P3dB = 156 W
38
34
96
30
80
26
64
22
48
18
14
Gps
32
2
4
6
8
10
12
Pin, INPUT POWER (WATTS)
14
10
6
16
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
46
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
−45
−50
0
ACPR
−55
−5
−60
4
12
20
28
8
16
24
Pout, OUTPUT POWER (WATTS, AVG. (W−CDMA))
32
Figure 4. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
50
VDD = 28 Vdc
IDQ = 1600 mA
f = 2120 MHz
16
0
40
0
η
35
30
−5
−10
IRL
VDD = 28 Vdc
Pout = 125 W (PEP)
IDQ = 1600 mA
Two−Tone Measurement, 10 MHz Tone Spacing
25
20
−15
−20
15
−25
Gps
10
−30
IMD
−35
5
0
2080
2100
2120
2160
2140
f, FREQUENCY (MHz)
2180
−40
2200
Figure 6. Broadband Linearity Performance
Figure 5. CW Performance
−25
14
2000 mA
VDD = 28 Vdc
f1 = 2112.5 MHz, f2 = 2122.5 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−30
1600 mA
−35
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−35
−10
176
0
−30
−40
Figure 3. 2 - Carrier (10 MHz Spacing)
W - CDMA Spectrum
144
−25
10
f, FREQUENCY (MHz)
160
−20
VDD = 28 Vdc, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz
25 Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
20
η
Gps
15
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−30
2000 mA
−40
1000 mA
−45
1600 mA
−50
1300 mA
13
1300 mA
1000 mA
12
VDD = 28 Vdc
f1 = 2112.5 MHz, f2 = 2122.5 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
11
−55
10
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MRF21125R3 MRF21125SR3
6
± IM3 (dBc), ± ACPR (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
RF Device Data
Freescale Semiconductor
f = 2110 MHz
Zo = 10 Ω
Zload
2170 MHz
Zsource
f = 2110 MHz
2170 MHz
VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2−Carrier W−CDMA
f
MHz
Zsource
Ω
Zload
Ω
2110
3.81 - j6.86
1.56 - j1.58
2140
4.33 - j7.90
1.53 - j1.90
2170
4.84 - j8.46
1.48 - j2.26
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF21125R3 MRF21125SR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF21125R3 MRF21125SR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
M
bbb
M
T A
B
M
M
T A
B
M
ccc
M
N
ccc
R
(INSULATOR)
M
T A
B
M
S
(LID)
aaa
M
M
T A
(LID)
M
(INSULATOR)
B
M
M
H
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
MRF21125R3
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF21125SR3
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF21125R3 MRF21125SR3
Document Number: MRF21125
Rev. 9, 5/2006
12
RF Device Data
Freescale Semiconductor