Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 32 volt transmitter equipment. • Typical Narrowband Two - Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 17 dB Efficiency — 36% IMD — - 35 dBc • Typical Broadband Two - Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 14.5 dB Efficiency — 37% IMD — - 31 dBc • Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. 470 - 860 MHz, 180 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Drain Current - Continuous ID 17 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 350 2.0 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.5 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M3 (Minimum) MRF372R3 MRF372R5 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) V(BR)DSS 68 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (2) (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.5 4.5 Vdc Drain - Source On - Voltage (1) (VGS = 10 V, ID = 3 A) VDS(on) — 0.28 0.45 Vdc gfs — 2.6 — S Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss — 260 — pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss — 69 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss — 2.5 — pF Off Characteristics (1) On Characteristics Forward Transconductance (VDS = 10 V, ID = 3 A) Dynamic Characteristics (1) Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17 — dB Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) η 33 36 — % IMD — - 35 - 31 dBc Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) Gps — 14.5 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) η — 37 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — - 31 — dBc 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. MRF372R3 MRF372R5 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 20 Ciss 150 15 100 10 Coss 50 0 0 5 Crss 10 20 30 40 50 C rss , Capacitance (pF) C oss , C iss , Capacitance (pF) 200 0 60 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Note: Ciss does not include input matching capacitance. Figure 1. Capacitance versus Voltage MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 3 GATE L1 L2 L3 R1 VGG R3 DRAIN L4 R4 R5 VDD + C3 R2 C5 C8 C7 C12 C10 Figure 2. 860 MHz Narrowband DC Bias Networks Table 5. 860 MHz Narrowband DC Bias Networks Component Designations and Values ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Designation Description C1 2.2 pF Chip Capacitor, ATC C2 0.5 — 5.0 pF Variable Capacitor, Johansen Gigatrim C3A, B 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS C4A, B, C14A, B 47.0 pF Chip Capacitors, ATC C5A, B 100 pF Chip Capacitors, ATC C6 10.0 pF Chip Capacitor, ATC C7A, B 2.7 pF Chip Capacitors, ATC C8A, B 1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT C9 10.0 pF Chip Capacitor, ATC C10A, B 2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT C11 5.1 pF Chip Capacitor, ATC C12A, B 0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT C13 3.9 pF Chip Capacitor, ATC C15 1.2 pF Chip Capacitor, ATC L1A, B 130 nH, Coilcraft #132 - 11SM L2A, B #24 AWG, 3 Turns Loose, Fair Rite #2643706001 L3A, B 3.85 nH, Coilcraft #0906 - 4 L4A, B 5.0 nH, Coilcraft #A02T R1A, B, R2A, B R4A, B, R5A, B 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B 12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 Balun A, B Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF372R3 MRF372R5 4 RF Device Data Freescale Semiconductor R2A R1A L1A L2A C3A C10A C8A C5A L3A R4A R5A L4A R3A C4A C12A C7A C14A C6 C1 C2 C9 C4B R3B C3B L1B L2B L3B C5B R1B R2B C8B R4B C11 L4B C15 C13 C14B R5B C7B C12B C10B MRF372 Rev 1a Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. 860 MHz Narrowband Component Layout MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 5 TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS 35 20 Gps −20 −25 h −30 15 −35 10 −40 IMR 5 −45 0 IMR, INTERMODULATION RATIO (dB) 25 30 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) −15 VDD = 32 Vdc IDQ = 1600 mA 2 K Mode 64 QAM 10 dB Peak/Avg. Ratio −50 100 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. Figure 4. COFDM Performance (860 MHz) 40 30 −25 25 −30 h 20 −35 Gps 15 −40 IMR 10 −45 5 10 100 18 G ps, POWER GAIN (dB) −20 20 IMR, INTERMODULATION RATIO (dB) h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 35 −15 VDD = 32 Vdc IDQ = 1600 mA 6 dB Peak/Avg. Ratio IDQ = 1600 mA 1.2 A 16 14 800 mA 400 mA VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 12 −50 10 10 Pout, OUTPUT POWER (WATTS) AVG. Note: Pout, OUTPUT POWER (WATTS) PEP IMR measured using Delta Marker Method. Figure 6. Power Gain versus Output Power 45 −10 −20 VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 40 η , DRAIN EFFICIENCY (%) D IMD, INTERMODULATION DISTORTION (dBc) Figure 5. 8 - VSB Performance (860 MHz) −15 IDQ = 400 mA −25 −30 800 mA −35 1.2 A −40 −45 −50 100 35 30 25 20 15 10 1.6 A 5 10 VDD = 32 Vdc IDQ = 800 mA f1 = 857 MHz f2 = 863 MHz 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Drain Efficiency versus Output Power MRF372R3 MRF372R5 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 875 MHz Zload f = 845 MHz f = 875 MHz Zsource f = 845 MHz VDD = 32 V, IDQ = 800 mA, Pout = 180 W PEP f MHz Zsource Ω Zload Ω 845 3.99 - j2.50 5.63 + j0.38 860 3.56 - j1.98 5.28 + j0.43 875 3.18 - j1.46 4.94 + j0.56 Harmonics f GHz Zsource Ω Zload Ω 1.69 2.85 + j14.30 1.23 + j9.37 1.72 3.27 + j14.32 1.54 + j9.60 1.75 3.35 + j14.36 1.73 + j9.62 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 9. Narrowband Series Equivalent Source and Load Impedance MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 7 GATE VGG L2 R6 DRAIN R5 L3 R9A R9B VDD + C9 C8 + R7 R3 R2 C7 C18 C17 C16 R4T Figure 10. 470 - 860 MHz Broadband DC Bias Networks Table 6. 470 - 860 MHz Broadband DC Bias Networks Component Designations and Values ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Designation Description C1 0.7 pF Chip Capacitor, ATC C2, C13 0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim C3A, B, C14A, B, C, D 100 pF Chip Capacitors, ATC C4 4.7 pF,Chip Capacitor, ATC C5 7.5 pF Chip Capacitor, ATC C6 10.0 pF Chip Capacitor, ATC C7A, B 6.2 pF Chip Capacitors, ATC C8A, B 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS C9A, B 0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT C10 13 pF Chip Capacitor, ATC C11 6.8 pF Chip Capacitor, ATC C12 3.9 pF Chip Capacitor, ATC C15A, B 3.3 pF Chip Capacitors, ATC C16A, B 10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS C17A, B 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT C18A, B 0.01 mF Chip Capacitors, ATC L1A, B 12.55 nH, Coilcraft #1606 - 10 L2A, B 5.45 nH, Coilcraft #0906 - 5 L3A, B, C 12.5 nH, Coilcraft #A04T R1A, B 10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R2A, B 2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B, R10A, B 390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) R4TA, B 520 Ω, Thermistor, Vishay #NTHS—1206J14520R5% R5A, B 6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R6A, B 6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) R7 100 kΩ Potentiometer, Bourns R8 47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206) R9A, B, C, D 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF372R3 MRF372R5 8 RF Device Data Freescale Semiconductor C8A R6A R8 C16A R4TA R2A L2A C9A L1A R3A C7A R1A C17A C18A R9A C5 C6 C10 C11 C12 C2 R1B C15A R10A C14A C4 C1 R9B L3A R5A C3A L3B C3B R5B L1B C9B C7B R6B C8B C13 L3C R9C L2B R2B R3B C14B R9D C14C C14D C15B C18B R10B C17B C16B R7 R4TB MRF372 Rev. 1a Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 11. 470 - 860 MHz Broadband Component Layout MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 9 IMD, INTERMODULATION DISTORTION (dBc) TYPICAL TWO - TONE BROADBAND CHARACTERISTICS G ps, POWER GAIN (dB) 20 18 VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz 16 Gps = 660 MHz 14 470 MHz 860 MHz 12 10 10 −10 −15 −20 VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz −25 −30 −40 660 MHz −45 −50 100 860 MHz IMD = 470 MHz −35 10 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain versus Output Power Figure 13. Intermodulation Distortion versus Output Power 45 VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz hD , DRAIN EFFICIENCY (%) 40 35 hD = 860 MHz 660 MHz 30 25 470 MHz 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 14. Drain Efficiency versus Output Power MRF372R3 MRF372R5 10 RF Device Data Freescale Semiconductor Zo = 10 Ω Zo = 10 Ω f = 860 MHz f = 860 MHz Zsource Zload f = 470 MHz f = 470 MHz VDD = 32 V, IDQ = 1000 mA, Pout = 180 W PEP f MHz Zsource Ω Zload Ω 470 4.46 - j2.57 4.88 - j3.50 560 6.40 + j1.06 5.45 - j0.07 660 7.84 + j0.14 8.13 + j0.73 760 6.67 + j0.46 8.27 - j1.00 860 6.25 + j0.31 7.52 + j0.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 15. Broadband Series Equivalent Source and Load Impedance MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 11 NOTES MRF372R3 MRF372R5 12 RF Device Data Freescale Semiconductor NOTES MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 13 NOTES MRF372R3 MRF372R5 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M B M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M A T SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G - 04 ISSUE G NI - 860C3 MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF372R3 MRF372R5 Document Number: MRF372 Rev. 9, 5/2006 16 RF Device Data Freescale Semiconductor