Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 28.4% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 33 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S9150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S9150HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Case Temperature 76°C, 33 W CW RθJC 0.34 0.34 °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Class 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S9150HR3 MRF5S9150HSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) VGS(Q) 3 4 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.15 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.1 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 91.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 18.5 19.7 21.5 dB Drain Efficiency ηD 26.5 28.4 — % ACPR — - 46.8 - 45 dBc IRL — - 20 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF5S9150HR3 MRF5S9150HSR3 2 RF Device Data Freescale Semiconductor VBIAS VSUPPLY B1 R2 + + C14 C18 C19 R1 C15 C16 C20 C21 C22 L2 C17 L1 C8 Z9 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z13 Z14 Z15 Z16 C5 Z17 RF OUTPUT C2 C7 C4 Z12 C6 Z8 C1 C3 C10 Z10 Z11 C11 C9 C12 C13 L3 DUT VSUPPLY + C23 C24 Z1 Z2 Z3, Z17 Z4 Z5 Z6 Z7 Z8 Z9 0.416″ x 0.080″ Microstrip 0.851″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip 0.055″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.630″ Taper 0.077″ x 0.630″ Microstrip 0.221″ x 0.630″ Microstrip 0.193″ x 0.630″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB C25 C26 C27 0.105″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.236″ x 0.220″ Microstrip 0.195″ x 0.220″ Microstrip 0.059″ x 0.220″ Microstrip 0.989″ x 0.080″ Microstrip 0.284″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S9150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S9150HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Small Ferrite Bead 2743019447 Fair Rite C1, C2, C17 47 pF Chip Capacitors 100B470JP500X ATC C3, C12 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4 13 pF Chip Capacitor 100B130JP500X ATC C5, C6 15 pF Chip Capacitors 100B150JP500X ATC C7, C8 12 pF Chip Capacitors 100B120JP500X ATC C9, C10 4.3 pF Chip Capacitors 100B4R3JP500X ATC C11 8.2 pF Chip Capacitor 100B8R2JP500X ATC C13 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C14 22 pF Chip Capacitor 100B220JP500X ATC C15 1 μF, 50 V Tantalum Capacitor T491C105K0J0AS Kemit C16 20K pF Chip Capacitor CDR353P203AK0S Kemit C18, C23 180 pF Chip Capacitors 100B181JP500X ATC C19, C20, C21, C24, C25, C26 10 μF, 50 V Chip Capacitors (2220) GRM55DR61H106KA88B Murata C22, C27 470 μF, 63 V Electrolytic Capacitors KME63VB471M12x25LL United Chemi - Con L1, L2, L3 12.5 nH Inductors A04T Coilcraft R1 180 kΩ, 1/4 W Chip Resistor R2 10 Ω, 1/4 W Chip Resistor MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 3 C22 C14 900 MHz Rev. 3 B1 C16 C19 C15 C20 C21 R2 R1 C18 C17 C5 C7 C9 L2 C1 C3 C4 C6 CUT OUT AREA L1 L3 C11 C12 C8 C10 C13 C2 C23 C24 C25 C26 C27 Figure 2. MRF5S9150HR3(HSR3) Test Circuit Component Layout MRF5S9150HR3 MRF5S9150HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 33 W (Avg.) IDQ = 1500 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 18.4 18 17.6 17.2 24 −40 −50 −55 −60 ALT1 16 840 −3 −45 IRL ACPR 16.8 16.4 28 26 850 860 870 880 890 900 910 −65 920 −8 −13 −18 −23 −28 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 19.2 18.8 30 ηD ACPR (dBc), ALT1 (dBc) Gps 19.6 ηD, DRAIN EFFICIENCY (%) 32 20 f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 33 Watts Avg. 41 39 Gps 18 37 VDD = 28 Vdc, Pout = 66 W (Avg.) IDQ = 1500 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 17.5 17 35 −35 −40 16.5 16 ACPR −45 IRL −50 15.5 15 −3 −55 ALT1 14.5 840 850 860 870 880 890 900 910 −60 920 −8 −13 −18 −23 −28 IRL, INPUT RETURN LOSS (dB) 18.5 ηD, DRAIN EFFICIENCY (%) 19 Gps, POWER GAIN (dB) 43 ηD ACPR (dBc), ALT1 (dBc) 19.5 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 66 Watts Avg. −10 IDQ = 2250 mA 21 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 22 1875 mA 20 1500 mA 19 1125 mA 18 VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 750 mA 17 16 VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 2250 mA −30 IDQ = 750 mA −40 −50 1875 mA 1500 mA −60 1125 mA −70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 5 −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1500 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −30 −40 3rd Order −50 −60 5th Order −70 −80 7th Order −90 1 VDD = 28 Vdc, Pout = 150 W (PEP) IDQ = 1500 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 −30 3rd Order −40 5th Order −50 7th Order −60 400 100 10 0 1 0.1 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 61 100 Ideal P6dB = 54.52 dBm (283.14 W) Pout, OUTPUT POWER (dBm) 59 P3dB = 53.84 dBm (242.1 W) 57 55 P1dB = 52.87 dBm (193.64 W) Actual 53 51 49 VDD = 28 Vdc, IDQ = 1500 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 47 45 25 27 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) −20 60 VDD = 28 Vdc, IDQ = 1500 mA f = 880 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 50 −30_C 85_C 25_C 40 85_C 30 ηD 20 Gps TC = −30_C 85_C 25_C 10 0 1 −40 25_C −50 ACPR ALT1 −30 −30_C 10 100 −60 −70 −80 300 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S9150HR3 MRF5S9150HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 70 −30_C Gps, POWER GAIN (dB) TC = −30_C Gps 85_C 50 21 25_C 20 40 85_C 30 19 18 VDD = 28 Vdc IDQ = 1500 mA f = 880 MHz 17 20 ηD ηD, DRAIN EFFICIENCY (%) 60 22 10 16 0 0.1 10 1 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21 IDQ = 1500 mA f = 880 MHz Gps, POWER GAIN (dB) 20 19 18 17 16 V 20 V 24 V 28 V 32 V VDD = 12 V 16 0 50 100 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MTTF FACTOR (HOURS X AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. ............ . . . .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . ................... ......... ........... ..... ......... . ............. ...... . . .. . . . . . . . .............. ................. ........ .......... ... ...... ........ ...... . . . .......... . . . . . . . . . ......... ............. . . . . .. . . . . .. . . . . .. .... . −ACPR in 30 kHz +ACPR in 30 kHz ................. ......... .. ............ . . ........... ... ................ . . . . . . Integrated BW Integrated BW .. ..... ............. ......... ...... .......... .......... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF5S9150HR3 MRF5S9150HSR3 8 RF Device Data Freescale Semiconductor f = 910 MHz Zload f = 850 MHz Zo = 5 Ω f = 850 MHz Zsource f = 910 MHz VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. f MHz Zsource W Zload W 850 3.61 - j2.30 1.12 + j0.09 865 2.85 - j2.54 1.24 + j0.22 880 2.13 - j2.47 1.31 + j0.36 895 1.53 - j2.27 1.46 + j0.48 910 1.02 - j1.90 1.61 + j0.53 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S9150HR3 MRF5S9150HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M M aaa M T A M M T A M B (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) 1 K 2X 2 D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF CASE 465 - 06 ISSUE G NI - 780 MRF5S9150HR3 4X U (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc F T DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S9150HR3 MRF5S9150HSR3 Document Number: MRF5S9150H Rev. 1, 5/2006 12 RF Device Data Freescale Semiconductor