Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Typ) • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output Power • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465D - 05, STYLE 1 NI - 600 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS ± 20 Vdc Drain Current — Continuous ID 7 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 159 0.9 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.1 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. Freescale Semiconductor RF Product Device Data MRF6522 - 70R3 4-1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(Q) 3 4 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.15 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2 3 — S Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 130 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss 41 47 52 pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss 2.4 3 3.4 pF Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) P1dB 73 80 — W Common - Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Gps 14 16 18 dB Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η1 47 51 — % Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η2 — 58 — % Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) IRL Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture) dB — — — — - 10 - 15 1. Value excludes the input matching. 2. To meet application requirements, Freescale test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch consistency. MRF6522 - 70R3 4-2 Freescale Semiconductor RF Product Device Data Vreg VBIAS C1 Vin T1 Vout Gnd R1 R6 R2 R3 C3 C12 C4 C10 VSUPPLY + C2 T2 R4 C7 C14 R5 C6 C13 RF Output RF Input C5 Q1 C8 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 C9 1.0 μF Chip Capacitor (0805) 10 μF, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU - P (0805) 2.7 pF Chip Capacitor, ACCU - P (0805) 4.7 pF Chip Capacitors, ACCU - P (0805) 8.2 pF Chip Capacitors, ACCU - P (0805) 2.2 pF Chip Capacitors, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1.0 kΩ Chip Resistor (0805) C11 R3 R4 R5 R6 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 220 Ω Chip Resistor (0805) 5.0 kΩ SMD Potentiometer T1 T2 LP2951 Micro - 8 BC847 SOT - 23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522 - 70 Test Circuit Schematic VBIAS C1 C2 R1 T1 R2 R3 R4 VSUPPLY Ground R6 T2 C14 C3 C4 R5 C6 C5 C8 MRF6522 - 70 C7 C10 C12 C13 C9 C11 Q1 STRAP Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6522 - 70 Test Circuit Component Layout MRF6522 - 70R3 Freescale Semiconductor RF Product Device Data 4-3 TYPICAL CHARACTERISTICS 17.5 18.0 IDQ = 600 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 17.0 500 mA 16.5 400 mA 200 mA IDQ = 600 mA 17.8 300 mA 16.0 VDS = 26 Vdc f = 921 MHz 17.6 500 mA 17.4 400 mA 17.2 300 mA 17.0 16.8 200 mA 16.6 15.5 16.4 15.0 16.0 VDS = 26 Vdc f = 960 MHz 16.2 10 100 10 100 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 105 Pin = 5.0 W 3.0 W 95 2.0 W 85 75 65 IDQ = 400 mA f = 921 MHz 55 45 18 19 20 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 Pout , OUTPUT POWER (WATTS) Figure 5. Output Power versus Supply Voltage 95 Pin = 5.0 W 4.0 W 85 3.0 W 75 2.0 W 65 55 IDQ = 400 mA f = 960 MHz 45 35 18 19 20 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 80 70 70 60 60 50 h 40 40 30 30 Pout 20 20 VDS = 26 Vdc IDQ = 400 mA f = 921 MHz 10 0 28 Figure 6. Output Power versus Supply Voltage 80 50 27 h , EFFICIENCY (%) 4.0 W 105 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 115 0 0.5 1.0 1.5 Pin, INPUT POWER (WATTS) 10 2.0 0 Figure 7. Efficiency and Output Power versus Input Power MRF6522 - 70R3 4-4 Freescale Semiconductor RF Product Device Data TYPICAL CHARACTERISTICS 80 Pout 70 70 60 60 50 50 h 40 40 30 30 20 20 VDS = 26 Vdc IDQ = 400 mA f = 960 MHz 10 0 h , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 80 0 0.5 1.0 1.5 Pin, INPUT POWER (WATTS) 10 2.0 0 20 70 19 60 50 18 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 921 MHz 20 h, EFFICIENCY (%) G ps , POWER GAIN (dB) Figure 8. Efficiency and Output Power versus Input Power 10 14 13 0 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) 20 70 19 60 18 50 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 960 MHz 20 h, EFFICIENCY (%) G ps , POWER GAIN (dB) Figure 9. Power Gain and Efficiency versus Input Power 10 14 13 0 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) Figure 10. Power Gain and Efficiency versus Input Power MRF6522 - 70R3 Freescale Semiconductor RF Product Device Data 4-5 TYPICAL CHARACTERISTICS 18 Gps −15 17 −20 16 IRL G ps , GAIN (dB) IRL, INPUT RETURN LOSS (dB) −10 VDS = 26 Vdc IDQ = 400 mA 15 −25 910 920 930 940 950 f, FREQUENCY (MHz) 960 970 Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522 - 70R3 4-6 Freescale Semiconductor RF Product Device Data Zload f = 925 MHz 960 MHz 960 MHz Zsource f = 925 MHz Zo = 5 Ω VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz Zsource Ω Zload Ω 925 2.65 - j2.53 1.62 + j0.2 940 2.67 - j2.14 1.56 + j0.34 960 2.85 - j1.87 1.55 + j0.2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6522 - 70R3 Freescale Semiconductor RF Product Device Data 4-7 NOTES MRF6522 - 70R3 4-8 Freescale Semiconductor RF Product Device Data NOTES MRF6522 - 70R3 Freescale Semiconductor RF Product Device Data 4-9 NOTES MRF6522 - 70R3 4 - 10 Freescale Semiconductor RF Product Device Data PACKAGE DIMENSIONS G B 2X 1 Q bbb M T A M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) bbb M D T A M bbb M T A M ccc M T A M B M M (INSULATOR) B N B E A T A B M M R (LID) S (INSULATOR) (LID) aaa T A M M C H ccc M M T A M F B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.190 0.223 0.594 0.606 0.591 0.601 0.124 0.130 0.394 0.404 0.395 0.405 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 27.05 27.30 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.69 4.83 5.66 15.09 15.39 15.01 15.27 3.15 3.30 10.01 10.26 10.03 10.29 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE CASE 465D - 05 ISSUE D NI - 600 MRF6522 - 70R3 Freescale Semiconductor RF Product Device Data 4 - 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6522 - 70R3 Document Number: MRF6522-70 4Rev. - 128, 5/2006 Freescale Semiconductor RF Product Device Data