Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 26 dB Drain Efficiency — 71% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push-Pull Operation • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 1.8-150 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 PART IS PUSH-PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +110 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Case Temperature 67°C, 1000 W CW, 100 MHz ZθJC RθJC 0.03 0.13 Table 2. Thermal Characteristics °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF6VP11KHR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 5 mA Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 μAdc) VGS(th) 1 1.63 3 Vdc Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain-Source On-Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.3 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 147 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 506 — pF Off Characteristics (1) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain-Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (1) Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 24 26 28 dB Drain Efficiency ηD 69 71 — % Input Return Loss IRL — -16 -9 dB 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. MRF6VP11KHR6 2 RF Device Data Freescale Semiconductor VBIAS R2 B1 + + + C1 C2 C3 L1 C4 C5 C6 C7 C8 C9 Z4 Z1 + L3 C10 C11 C13 Z8 RF INPUT VSUPPLY R1 Z2 Z12 Z14 C15 C16 C17 C18 C19 C20 Z16 Z3 Z18 DUT Z5 + Z6 J1 L2 C21 Z10 C14 + C23 C24 C25 Z9 Z11 Z13 Z15 C26 Z17 T1 RF OUTPUT J2 Z7 C12 Z19 T2 C22 Z1 Z2* Z3* Z4, Z5 Z6, Z7, Z8, Z9 Z10, Z11 Z12, Z13 0.175″ x 0.082″ Microstrip 1.461″ x 0.082″ Microstrip 0.080″ x 0.082″ Microstrip 0.133″ x 0.193″ Microstrip 0.500″ x 0.518″ Microstrip 0.102″ x 0.253″ Microstrip 0.206″ x 0.253″ Microstrip Z14, Z15 Z16*, Z17* Z18 Z19 PCB 0.116″ x 0.253″ Microstrip 0.035″ x 0.253″ Microstrip 0.275″ x 0.082″ Microstrip 0.845″ x 0.082″ Microstrip Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55 *Line length includes microstrip bends. Figure 2. MRF6VP11KHR6 Test Circuit Schematic Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 95 Ω, 100 MHz Long Ferrite Bead 2743021447 Fair-Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap C2 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C4, C9, C17 10K pF Chip Capacitors ATC200B103KT50XT ATC C5, C16 20K pF Chip Capacitors ATC200B203KT50XT ATC C6, C15 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC Kemet C8 0.22 μF, 100 V Chip Capacitor C1825C223K1GAC Kemet C10, C11, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC C12 18 pF Chip Capacitor ATC100B180JT500XT ATC C18, C19, C20 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C21, C22 47 pF Chip Capacitors ATC100B470JT500XT ATC C23 75 pF Chip Capacitor ATC100B750JT500XT ATC C24, C25 100 pF Chip Capacitors ATC100B101JT500XT ATC C26 33 pF Chip Capacitor ATC100B330JT500XT ATC J1, J2 Jumpers from PCB to T1 and T2 Copper Foil L1 82 nH Inductor 1812SMS-82NJLC CoilCraft L2 47 nH Inductor 1812SMS-47NJLC CoilCraft L3* 10 Turns, #18 AWG Inductor, Hand Wound Copper Wire R1 1 KΩ, 1/4 W Carbon Leaded Resistor MCCFR0W4J0102A50 Multicomp R2 20 Ω, 3 W Chip Resistor CPF320R000FKE14 Vishay T1 Balun TUI-9 Comm Concepts T2 Balun TUO-4 Comm Concepts *L3 is wrapped around R2. MRF6VP11KHR6 RF Device Data Freescale Semiconductor 3 C1 C19 C2 C3 C17 C16 C15 C4 C5 C6 B1 C20 L1 C14 C7 C8 C9 C18 R1 C10 C11 L3, R2* C13 C21 T2 T1 C24 C25 L2 C12 CUT OUT AREA J1 J2 C23 C22 C26 MRF6VP11KH Rev. 3 * L3 is wrapped around R2. Figure 3. MRF6VP11KHR6 Test Circuit Component Layout MRF6VP11KHR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 TJ = 200°C TJ = 175°C TJ = 150°C 10 TC = 25°C 1 1 10 20 30 40 50 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage Figure 5. DC Safe Operating Area 80 26 70 Gps 25 60 24 50 23 40 ηD 22 30 21 20 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 20 10 100 1000 65 63 P1dB = 60.57 dBm (1140.24 W) 62 61 Actual 60 59 58 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 57 10 2000 Ideal P3dB = 61.23 dBm (1327.39 W) 64 Pout, OUTPUT POWER (dBm) 27 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 0 56 30 31 32 33 34 35 36 37 38 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Output Power versus Input Power 32 39 28 28 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) IDQ = 6000 mA 3600 mA 1500 mA 750 mA 375 mA 24 150 mA 20 24 20 VDD = 30 V 40 V 35 V 45 V 50 V 16 IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% VDD = 50 Vdc, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 16 12 10 100 1000 2000 0 200 400 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain versus Output Power 1600 MRF6VP11KHR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 65 27 80 85_C 55 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% 50 45 20 25 30 35 40 25_C 25 60 85_C 50 24 Gps 23 ηD 22 21 20 10 45 40 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% 1000 100 30 ηD, DRAIN EFFICIENCY (%) 60 25_C 70 26 TC = -30_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) TC = -30_C 20 10 2000 Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 10. Pulsed Output Power versus Input Power Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power 0.2 ZJC, THERMAL IMPEDANCE (°C/W) 0.18 0.16 D = 0.7 0.14 0.12 D = 0.5 0.1 PD 0.08 t1 t2 0.06 0.04 D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC D = 0.1 0.02 0 0.00001 0.0001 0.001 0.01 0.1 1 10 RECTANGULAR PULSE WIDTH (S) 108 109 107 108 MTTF (HOURS) MTTF (HOURS) Figure 12. Maximum Transient Thermal Impedance 106 105 107 106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W CW, and ηD = 72%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature - CW 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec, Duty Cycle = 20%, and ηD = 71%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature - Pulsed MRF6VP11KHR6 6 RF Device Data Freescale Semiconductor f = 130 MHz Zsource Zo = 10 Ω f = 130 MHz Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource W Zload W 130 1.58 + j6.47 4.6 + j1.85 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Z source Output Matching Network + Z load Figure 15. Series Equivalent Source and Load Impedance MRF6VP11KHR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6VP11KHR6 8 RF Device Data Freescale Semiconductor MRF6VP11KHR6 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3. • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 July 2008 • Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6 3 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain-Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per-side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 • Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 4 Dec. 2008 • Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”, p. 7 5 July 2009 • Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26-RH”, changed R1 Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and “CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component Designations and Values, p. 3 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from 70% to 72%, p. 6 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 6 Dec. 2009 • Device frequency range improved from 10-150 MHz to 1.8-150 MHz, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1 MRF6VP11KHR6 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF6VP11KHR6 Document Number: RF Device Data MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor 11