Freescale Semiconductor Technical Data Document Number: MW5IC970N Rev. 2, 4/2008 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. These devices have a 2 - stage design with off - chip matching for the input, interstage and output networks to cover the desired frequency band. • Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 Watts PEP Power Gain — 30 dB Drain Efficiency — 48% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW5IC970NBR1 MW5IC970GNBR1 800 - 900 MHz, 70 W, 28 V RF LDMOS WIDEBAND 2 - STAGE POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW5IC970NBR1 CASE 1329A - 04 TO - 272 WB - 16 GULL PLASTIC MW5IC970GNBR1 VRD2 Quiescent Current Temperature Compensation (1) VRG2/VGS2 VRG1/VGS1 RFin1 VD2/RFout2 VRD1 VD1/RFout1 VD1/RFout1 GND VRD2 VRG2/VGS2 VRG1/VGS1 RFin1 1 2 3 4 5 16 15 GND NC GND 6 14 VD2/ RFout2 VRD1 VD1/RFout1 VD1/RFout1 RFin2 GND 7 8 9 10 11 13 12 NC GND (Top View) RFin2 Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MW5IC970NBR1 MW5IC970GNBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, + 65 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Storage Temperature Range Tstg - 65 to +200 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RθJC °C/W Final Application (Pout = 70 W CW) Stage 1, 28 Vdc, IDQ = 80 mA Stage 2, 28 Vdc, IDQ = 650 mA 5.2 0.8 EDGE Application (Pout = 35 W CW) Stage 1, 28 Vdc, IDQ = 80 mA Stage 2, 28 Vdc, IDQ = 650 mA 5.3 0.8 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28.5 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 W PEP, f1 = 870.0 MHz, f2 = 870.1 MHz Power Gain Gps 26.5 30 34.5 dB Drain Efficiency ηD 40 48 — % Input Return Loss IRL — - 12 - 10 dB Intermodulation Distortion IMD — - 33 - 28 dBc Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, 740 - 870 MHz, 870 - 960 MHz Gain Flatness in 30 MHz Bandwidth @ Pout = 70 W CW GF — 2 — dB Gain Flatness in 30 MHz Instantaneous Bandwidth @ Pout = 70 W CW GF — 0.2 — dB Delay — 4.5 — ns ΔΦ — ±15 — ° Delay @ Pout = 70 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 70 W CW 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW5IC970NBR1 MW5IC970GNBR1 2 RF Device Data Freescale Semiconductor VBIAS VD2 R6 F1 R4 R8 R5 R7 R3 R2 1 C18 C16 R1 C15 RF INPUT Z1 2 VG2R2 C17 VG1R1 Z2 Z3 3 C8 16 Quiescent Current Temperature Compensation NC 15 4 Z6 5 C7 Z5 C2 6 C1 C9 Z7 C10 Z8 C12 Z9 RF OUTPUT 14 C6 7 C13 C11 Z10 8 C5 C14 9 10 NC 13 11 12 Z11 Z4 C3 C4 F2 VD1 Z1 Z2 Z3 Z4 Z5 Z6 0.485″ 0.270″ 0.068″ 0.950″ 0.131″ 0.797″ x 0.066″ x 0.040″ x 0.020″ x 0.040″ x 0.233″ x 0.050″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.040″ x 0.233″ Microstrip 0.450″ x 0.120″ Microstrip 0.100″ x 0.066″ Microstrip 1.000″ x 0.040″ Microstrip 0.148″ x 0.040″ Microstrip Rogers 4350B, 0.030″, εr = 3.5 Figure 3. MW5IC970NBR1(GNBR1) Test Circuit Schematic Table 6. MW5IC970NBR1(GNBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C10, C11 3.9 pF Chip Capacitor ATC600S3R9BT250T ATC C2 56 pF Chip Capacitor ATC600S560JT250T ATC C3, C8, C14, C15, C17 39 pF Chip Capacitors GRM40001C0G390J050BD Murata C4, C9 10 μF Chip Capacitors ECJ4YF1H106Z Panasonic C5 24 pF Chip Capacitor ATC600F240JT250T ATC C6, C7 15 pF Chip Capacitors ATC600F150JT250T ATC C12 4.7 pF Chip Capacitor ATC600F4R7BT250T ATC C13 0.4 pF Chip Capacitor ATC600F0R4BT250T ATC C16, C18, C19, C20 0.015 μF Chip Capacitors GRM400X7R153J050BD Murata F1 5A Surface Mount Fuse 1FT5A Little Fuse F2 1A Surface Mount Fuse 1FT1A Little Fuse R1, R7 681 Ω, 1/8 W Chip Resistors CRCW08056810FKEA Vishay R2, R5 4.75 kΩ, 1/8 W Chip Resistors CRCW08054751FKEA Vishay R3, R4, R8 1.21 kΩ, 1/8 W Chip Resistors CRCW08051211FKEA Vishay R6 267 Ω, 1/8 W Chip Resistor CRCW08052670FKEA Vishay MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 3 VD2 F1 VG2 C9 R6 VG1 C8 R8 R7 R4 R5 C18 C17 R3 R2 R1 C16 C15 C11 C13 C7 C10 C2 C6 C12 C1 C C5 C14 C3 MW5IC970 VD1 C4 Rev. 1 F2 Figure 4. MW5IC970NBR1(GNBR1) Test Circuit Component Layout MW5IC970NBR1 MW5IC970GNBR1 4 RF Device Data Freescale Semiconductor PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 60 60 PAE 40 40 Gps 20 20 VDD = 28.5 Vdc, Pout = 35 W (Avg.) IDQ1 = 80 mA, IDQ2 = 650 mA 100 kHz Tone Spacing 0 0 IRL −20 −20 IMD −40 800 820 840 860 880 900 920 −40 960 940 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 5. Two - Tone Wideband Performance @ Pout = 35 Watts (Avg.) IDQ2 = 975 mA 812 mA 650 mA 30 488 mA 29 28 VDD = 28.5 Vdc, IDQ1 = 80 mA f1 = 870 MHz, f2 = 870.1 MHz Two−Tone Measurements 100 kHz Tone Spacing 325 mA 27 10 IMD, INTERMODULATION DISTORTION (dBc) 1 100 VDD = 28.5 Vdc IDQ1 = 80 mA, IDQ2 = 650 mA f1 = 870 MHz, f2 = 870.1 MHz Two−Tone Measurements 100 kHz Tone Spacing −20 −30 3rd Order −40 −50 5th Order 7th Order −60 −70 1 200 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Two - Tone Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power −20 34 VDD = 28.5 Vdc, Pout = 35 W (PEP) IDQ1 = 80 mA, IDQ2 = 650 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 870 MHz −25 −30 32 −35 5th Order −45 70 VDD = 28.5 Vdc, IDQ1 = 80 mA IDQ2 = 650 mA, f = 870 MHz 7th Order −50 1 10 25_C 60 85_C 50 Gps 30 28 TC = 25_C 40 85_C 26 100 TWO−TONE SPACING (MHz) Figure 8. Intermodulation Distortion Products versus Tone Spacing 200 30 24 20 PAE 22 −55 0.1 −30_C −30_C 3rd Order −40 300 100 Pout, OUTPUT POWER (WATTS) PEP Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 31 −10 20 0.1 1 10 10 100 PAE, POWER ADDED EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 32 0 1000 Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus CW Output Power MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 32 IDQ1 = 80 mA IDQ2 = 650 mA f = 870 MHz Gps, POWER GAIN (dB) 31 30 29 16 V 28 24 V VDD = 12 V 27 0 20 40 20 V 60 80 32 V 28.5 V 100 120 140 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain versus Output Power MW5IC970NBR1 MW5IC970GNBR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 7 MW5IC970NBR1 MW5IC970GNBR1 8 RF Device Data Freescale Semiconductor MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 9 MW5IC970NBR1 MW5IC970GNBR1 10 RF Device Data Freescale Semiconductor MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 11 MW5IC970NBR1 MW5IC970GNBR1 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Apr. 2008 Description • Document Number changed from MW5IC970NBR1 to MW5IC970N with the addition of the MW5IC970GNBR1 part number. Revision history sequencing maintained from first release of data sheet, p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Replaced Case Outline 1329 - 09, Issue L, with 1329 - 09, Issue M, p. 1, 7 - 9. Added pin numbers 1 through 17. • Added Case Outline 1329A - 04, Issue F, p. 1, 10 - 12 • Added Product Documentation and Revision History, p. 13 MW5IC970NBR1 MW5IC970GNBR1 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MW5IC970NBR1 MW5IC970GNBR1 Document Number: MW5IC970N Rev. 2, 4/2008 14 RF Device Data Freescale Semiconductor