GS880Z18/36AT-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • User-configurable Pipeline and Flow Through mode • LBO pin for Linear or Interleave Burst mode • Pin compatible with 2M, 4M, and 8M devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • JEDEC-standard 100-lead TQFP package The GS880Z18/36AT is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Pipeline 3-1-1-1 3.3 V 2.5 V tKQ tCycle Curr (x18) Curr (x32/x36) Curr (x18) Curr (x32/x36) 280 330 275 320 255 300 250 295 230 270 230 265 200 230 195 225 185 215 180 210 165 190 165 185 mA mA mA mA tKQ tCycle 5.5 5.5 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.5 8.5 ns ns Curr (x18) Curr (x32/x36) Curr (x18) Curr (x32/x36) 175 200 175 200 165 190 165 190 160 180 160 180 150 170 150 170 145 165 145 165 135 150 135 150 mA mA mA mA Flow Through 2-1-1-1 3.3 V 2.5 V -250 -225 -200 -166 -150 -133 Unit 2.5 2.7 3.0 3.4 3.8 4.0 ns 4.0 4.4 5.0 6.0 6.7 7.5 ns Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS880Z18/36AT may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, meaning that in addition to the rising edge triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS880Z18/36AT is implemented with GSI's high performance CMOS technology and is available in a JEDECStandard 100-pin TQFP package. Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles Clock Address A B C D E F Read/Write R W R W R W Flow Through Data I/O Pipelined Data I/O Rev: 1.02 9/2002 QA DB QC DD QE QA DB QC DD 1/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. QE © 2001, Giga Semiconductor, Inc. NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. GS880Z18/36AT-250/225/200/166/150/133 A6 A7 E1 E2 NC NC BB BA E3 VDD VSS CK W CKE G ADV NC A17 A8 A9 GS880Z18AT Pinout NC NC NC VDDQ A18 NC NC VDDQ VSS NC DQA9 DQA8 DQA7 VSS VDDQ DQA6 DQA5 VSS NC VDD ZZ DQA4 DQA3 VDDQ VSS DQA2 DQA1 NC NC VSS VDDQ NC NC NC LBO A5 A4 A3 A2 A1 A0 NC NC VSS VDD NC NC A10 A11 A12 A13 A14 A15 A16 VSS NC NC DQB1 DQB2 VSS VDDQ DQB3 DQB4 FT VDD VDD VSS DQB5 DQB6 VDDQ VSS DQB7 DQB8 DQB9 NC VSS VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 512K x 18 10 71 11 Top View 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Rev: 1.02 9/2002 2/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 A6 A7 E1 E2 BD BC BB BA E3 VDD VSS CK W CKE G ADV NC A17 A8 A9 GS880Z36AT Pinout DQC9 DQC8 DQC7 VDDQ DQB9 DQB8 DQB7 VDDQ VSS DQB6 DQB5 DQB4 DQB3 VSS VDDQ DQB2 DQB1 VSS NC VDD ZZ DQA1 DQA2 VDDQ VSS DQA3 DQA4 DQA5 DQA6 VSS VDDQ DQA7 DQA8 DQA9 LBO A5 A4 A3 A2 A1 A0 NC NC VSS VDD NC NC A10 A11 A12 A13 A14 A15 A16 VSS DQC6 DQC5 DQC4 DQC3 VSS VDDQ DQC2 DQC1 FT VDD VDD VSS DQD1 DQD2 VDDQ VSS DQD3 DQD4 DQD5 DQD6 VSS VDDQ DQD7 DQD8 DQD9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 256K x 36 10 71 11 Top View 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Rev: 1.02 9/2002 3/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 100-Pin TQFP Pin Descriptions Symbol Type Description A 0, A 1 In Burst Address Inputs; Preload the burst counter A2–A17 In Address Inputs A18 In Address Input (x18 Version Only) CK In Clock Input Signal BA In Byte Write signal for data inputs DQA1–DQA9; active low BB In Byte Write signal for data inputs DQB1–DQB9; active low BC In Byte Write signal for data inputs DQC1–DQC9; active low BD In Byte Write signal for data inputs DQD1–DQD9; active low W In Write Enable; active low E1 In Chip Enable; active low E2 In Chip Enable; Active High. For self decoded depth expansion E3 In Chip Enable; Active Low. For self decoded depth expansion G In Output Enable; active low ADV In Advance/Load; Burst address counter control pin CKE In Clock Input Buffer Enable; active low NC — No Connect DQA1–DQA9 I/O Byte A Data Input and Output pins DQB1–DQB9 I/O Byte B Data Input and Output pins DQC1–DQC9 I/O Byte C Data Input and Output pins DQD1–DQD9 I/O Byte D Data Input and Output pins ZZ In Power down control; active high FT In Pipeline/Flow Through Mode Control; active low LBO In Linear Burst Order; active low VDD In Core power supply VSS In Ground VDDQ In Output driver power supply Rev: 1.02 9/2002 4/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Register 1 Register 2 K Write Data Write Data K D Q K FT DQa–DQn GS880Z18/36A NBT SRAM Functional Block Diagram Memory Array Sense Amps FT Register 2 Register 1 Control Logic 5/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. G CKE CK E3 E2 E1 BD BC BB BA W LBO ADV A0–An K K Data Coherency Match Read, Write and K Write Address Write Address K K D Q SA1 SA0 Burst Counter SA1’ SA0’ Write Drivers Rev: 1.02 9/2002 © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipeline Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2 and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function W BA BB BC BD Read H X X X X Write Byte “a” L L H H H Write Byte “b” L H L H H Write Byte “c” L H H L H Write Byte “d” L H H H L Write all Bytes L L L L L Write Abort/NOP L H H H H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted Low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins. Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, & BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow Through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.02 9/2002 6/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Synchronous Truth Table Operation Type Address E1 E2 E3 ZZ ADV W Bx G CKE CK DQ Notes Deselect Cycle, Power Down D None H X X L L X X X L L-H High-Z Deselect Cycle, Power Down D None X X H L L X X X L L-H High-Z Deselect Cycle, Power Down D None X L X L L X X X L L-H High-Z Deselect Cycle, Continue D None X X X L H X X X L L-H High-Z Read Cycle, Begin Burst R External L H L L L H X L L L-H Q Read Cycle, Continue Burst B Next X X X L H X X L L L-H Q 1,10 NOP/Read, Begin Burst R External L H L L L H X H L L-H High-Z 2 Dummy Read, Continue Burst B Next X X X L H X X H L L-H High-Z 1,2,10 Write Cycle, Begin Burst W External L H L L L L L X L L-H D 3 Write Cycle, Continue Burst B Next X X X L H X L X L L-H D 1,3,10 NOP/Write Abort, Begin Burst W None L H L L L L H X L L-H High-Z 2,3 Write Abort, Continue Burst B Next X X X L H X H X L L-H High-Z 1,2,3,10 Current X X X L X X X X H L-H - None X X X H X X X X X X High-Z Clock Edge Ignore, Stall Sleep Mode 1 4 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.02 9/2002 7/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Pipeline and Flow Through Read Write Control State Diagram D B Deselect W R D R D W New Read New Write R W B B R B W R Burst Read W Burst Write D Key B D Notes: Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B and D represent input command codes ,as indicated in the Synchronous Truth Table. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for Pipeline and Flow Through Read/Write Control State Diagram Rev: 1.02 9/2002 8/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Pipeline Mode Data I/O State Diagram Intermediate B W R B Intermediate R High Z (Data In) D Data Out (Q Valid) W D Intermediate Intermediate W Intermediate R High Z B D Intermediate Key Notes: Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Intermediate State (N+1) n Next State (n+2) n+1 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+2 n+3 Clock (CK) Command ƒ ƒ ƒ Current State Intermediate State Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.02 9/2002 9/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Flow Through Mode Data I/O State Diagram B W R B R High Z (Data In) Data Out (Q Valid) W D D W R High Z B D Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B and D represent input command codes as indicated in the Truth Tables. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for: Pipeline and Flow Through Read Write Control State Diagram Rev: 1.02 9/2002 10/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details. Mode Pin Functions Mode Name Pin Name State Burst Order Control LBO Power Down Control ZZ Function L Linear Burst H Interleaved Burst L or NC Active H Standby, IDD = ISB Note: There is a pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences Interleaved Burst Sequence Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.02 9/2002 11/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a deselect or read commands may be applied while the SRAM is recovering from Sleep mode. ~ ~ ~ ~ CK ~ ~ ~ ~ ~ ~ Sleep Mode Timing Diagram ZZ tZZS Sleep tZZR tZZH Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Pin 14. Not all vendors offer this option, however most mark Pin 14 as VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Pin 66, a No Connect (NC) on GSI’s GS880Z18A/36 NBT SRAM, the Parity Error open drain output on GSI’s GS881Z18/36A NBT SRAM, is often marked as a power pin on other vendor’s NBT compatible SRAMs. Specifically, it is marked VDD or VDDQ on pipelined parts and VSS on flow through parts. Users of GSI NBT devices who are not actually using the ByteSafe™ parity feature may want to design the board site for the RAM with Pin 66 tied high through a 1k ohm resistor in Pipeline mode applications or tied low in Flow Through mode applications in order to keep the option to use non-configurable devices open. By using the pull-up resistor, rather than tying the pin to one of the power rails, users interested in upgrading to GSI’s ByteSafe NBT SRAMs (GS881Z18/36A), featuring Parity Error detection and JTAG Boundary Scan, will be ready for connection to the active low, open drain Parity Error output driver at Pin 66 on GSI’s TQFP ByteSafe RAMs. Rev: 1.02 9/2002 12/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to 4.6 V VCK Voltage on Clock Input Pin –0.5 to 6 V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 o TBIAS Temperature Under Bias –55 to 125 oC C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Rev: 1.02 9/2002 13/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Power Supply Voltage Ranges Parameter Symbol Min. Typ. Max. Unit 3.3 V Supply Voltage VDD3 3.0 3.3 3.6 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 3.3 V VDDQ I/O Supply Voltage VDDQ3 3.0 3.3 3.6 V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. VDDQ3 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 2.0 — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.8 V 1 VDDQ I/O Input High Voltage VIHQ 2.0 — VDDQ + 0.3 V 1,3 VDDQ I/O Input Low Voltage VILQ –0.3 — 0.8 V 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. VDDQ2 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 0.6*VDD — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.3*VDD V 1 VDDQ I/O Input High Voltage VIHQ 0.6*VDD — VDDQ + 0.3 V 1,3 VDDQ I/O Input Low Voltage VILQ –0.3 — 0.3*VDD V 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. Rev: 1.02 9/2002 14/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Recommended Operating Temperatures Parameter Symbol Min. Typ. Max. Unit Notes Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 2 Ambient Temperature (Industrial Range Versions) TA –40 25 85 °C 2 Note: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. Package Thermal Characteristics Rating Layer Board Symbol Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 °C/W 1,2 Junction to Ambient (at 200 lfm) four RΘJA 24 °C/W 1,2 Junction to Case (TOP) — RΘJC 9 °C/W 3 Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 Rev: 1.02 9/2002 15/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDD/2 Output reference level VDDQ/2 Output load Fig. 1 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. Output Load 1 DQ 30pF* 50Ω VDDQ/2 * Distributed Test Jig Capacitance DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA ZZ Input Current IIN1 VDD ≥ VIN ≥ VIH 0 V ≤ VIN ≤ VIH –1 uA –1 uA 1 uA 100 uA FT Input Current IIN2 VDD ≥ VIN ≥ VIL 0 V ≤ VIN ≤ VIL –100 uA –1 uA 1 uA 1 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.375 V 1.7 V — Output High Voltage VOH3 IOH = –8 mA, VDDQ = 3.135 V 2.4 V — Output Low Voltage VOL IOL = 8 mA — 0.4 V Rev: 1.02 9/2002 16/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. Rev: 1.02 9/2002 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 17/25 — Device Deselected; All other inputs ≥ VIH or ≤ VIL Deselect Current IDD 60 85 IDD Pipeline Flow Through 20 ISB 20 ISB Pipeline Flow Through 165 10 260 15 180 20 290 30 IDDQ IDD IDDQ IDD IDDQ IDD IDDQ IDD IDDQ IDD Flow Through Pipeline Flow Through Pipeline Flow Through 165 10 260 20 IDD IDDQ 180 20 IDD IDDQ Flow Through Pipeline 290 40 0 to 70°C IDD IDDQ Symbol Pipeline Mode 65 90 30 30 175 10 270 15 190 20 300 30 175 10 270 20 190 20 300 40 –40 to 85°C -250 60 80 20 20 155 10 235 15 170 20 265 30 155 10 235 20 170 20 265 35 65 85 30 30 165 10 245 15 180 20 275 30 165 10 245 20 180 20 275 35 –40 to 85°C -225 0 to 70°C Notes: 1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation. 2. All parameters listed are worst case scenario. — ZZ ≥ VDD – 0.2 V (x18) (x36) (x18) (x36) Standby Current 2.5 V Operating Current Device Selected; All other inputs ≥VIH or ≤ VIL Output open Device Selected; All other inputs ≥VIH or ≤ VIL Output open Operating Current 3.3 V Test Conditions Parameter Operating Currents 50 75 20 20 150 10 215 15 165 15 240 25 150 10 215 15 165 15 240 30 0 to 70°C 55 80 30 30 160 10 225 15 175 15 250 25 160 10 225 15 175 15 250 30 –40 to 85°C -200 50 64 20 20 140 10 185 10 155 15 205 20 140 10 185 15 155 15 205 25 0 to 70°C 55 70 30 30 150 10 195 10 165 15 215 20 150 10 195 15 165 15 215 25 –40 to 85°C -166 50 60 20 20 135 10 170 10 150 15 190 20 135 10 170 15 150 15 190 25 0 to 70°C 55 65 30 30 145 10 180 10 160 15 200 20 145 10 180 15 160 15 200 25 –40 to 85°C -150 45 50 20 20 125 10 155 10 140 10 170 15 125 10 155 10 140 10 170 20 0 to 70°C 50 55 30 30 135 10 165 10 150 10 180 15 135 10 165 10 150 10 180 20 –40 to 85°C -133 mA mA mA mA mA mA mA mA mA mA mA mA Unit GS880Z18/36AT-250/225/200/166/150/133 © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 AC Electrical Characteristics Pipeline Flow Through Parameter Symbol Clock Cycle Time -250 -225 -200 -166 -150 -133 Unit Min Max Min Max Min Max Min Max Min Max Min Max tKC 4.0 — 4.4 — 5.0 — 6.0 — 6.7 — 7.5 — ns Clock to Output Valid tKQ — 2.5 — 2.7 — 3.0 — 3.4 — 3.8 — 4.0 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in Low-Z tLZ1 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Setup time tS 1.2 — 1.3 — 1.4 — 1.5 — 1.5 — 1.5 — ns Hold time tH 0.2 — 0.3 — 0.4 — 0.5 — 0.5 — 0.5 — ns Clock Cycle Time tKC 5.5 — 6.0 — 6.5 — 7.0 — 7.5 — 8.5 — ns Clock to Output Valid tKQ — 5.5 — 6.0 — 6.5 — 7.0 — 7.5 — 8.5 ns Clock to Output Invalid tKQX 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns 1 Clock to Output in Low-Z tLZ 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns Setup time tS 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns Hold time tH 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns Clock HIGH Time tKH 1.3 — 1.3 — 1.3 — 1.3 — 1.5 — 1.7 — ns Clock LOW Time tKL 1.5 — 1.5 — 1.5 — 1.5 — 1.7 — 2 — ns Clock to Output in High-Z tHZ1 1.5 2.3 1.5 2.5 1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 ns G to Output Valid tOE — 2.3 — 2.5 — 3.2 — 3.5 — 3.8 — 4.0 ns G to output in Low-Z tOLZ1 0 — 0 — 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 2.3 — 2.5 — 3.0 — 3.0 — 3.0 — 3.0 ns ZZ setup time tZZS2 5 — 5 — 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.02 9/2002 18/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Pipeline Mode Read/Write Cycle Timing 1 2 3 4 5 6 7 8 9 A5 A6 A7 10 CK tS tH tKH tKL tKC CKE tS tH E* tS tH ADV tS tH W tS tH Bn tS tH A0–An A1 A2 A3 A4 tKQ tGLQV tKQHZ tKHQZ tKQLZ DQA–DQD D(A1) tS D (A2+1) D(A2) tH Q(A3) Q(A4) Q (A4+1) D(A5) Q(A6) tKQX tOEHZ tOELZ G COMMAND Write D(A1) Write D(A2) BURST Read Q(A3) Write D(A2+1) Read Q(A4) BURST Read Q(A4+1) Write D(A5) DON’T CARE Read Q(A6) Write D(A7) DESELECT UNDEFINED *Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.02 9/2002 19/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Pipeline Mode No-Op, Stall and Deselect Timing 1 2 3 4 5 A3 A4 6 7 8 10 9 CK tS tH CKE tS tH E* tS tH ADV tS tH W Bn A0–An A1 A2 A5 tKHQZ DQ D(A1) Q(A2) Q(A3) D(A4) Q(A5) tKQHZ COMMAND Write D(A1) Read Q(A2) STALL Read Q(A3) Write D(A4) STALL NOP DON’T CARE Read Q(A5) DESELECT CONTINUE DESELECT UNDEFINED *Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.02 9/2002 20/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Flow Through Mode Read/Write Cycle Timing 1 4 3 2 5 6 7 8 9 A5 A6 A7 10 CK tS tH tKH tKL tKC CKE tS tH E* tS tH ADV tS tH W tS tH Bn tS tH A0–An A1 A2 A3 tKQ A4 tKQHZ tGLQV tKHQZ tKQLZ DQ D(A1) tS D(A2) D (A2+1) tH Q(A3) Q (A4+1) Q(A4) D(A5) Q(A6) tKQX tOEHZ tOELZ G COMMAND Write D(A1) Write D(A2) BURST Read Q(A3) Write D(A2+1) Read Q(A4) BURST Read Q(A4+1) Write D(A5) Read Q(A6) DON’T CARE Write D(A7) DESELECT UNDEFINED *Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.02 9/2002 21/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Flow Through Mode No-Op, Stall and Deselect Timing 1 2 3 4 5 A3 A4 6 7 8 10 9 CK tS tH CKE tS tH E* tS tH ADV W Bn A0–An A1 A2 A5 tKHQZ D(A1) DQ Q(A2) Q(A3) Q(A5) D(A4) tKQHZ COMMAND Write D(A1) Read Q(A2) STALL Read Q(A3) Write D(A4) STALL NOP DON’T CARE Read Q(A5) DESELECT CONTINUE DESELECT UNDEFINED *Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.02 9/2002 22/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 TQFP Package Drawing L Min. Nom. Max A1 Standoff 0.05 0.10 0.15 A2 Body Thickness 1.35 1.40 1.45 b Lead Width 0.20 0.30 0.40 c Lead Thickness 0.09 — 0.20 D Terminal Dimension 21.9 22.0 20.1 D1 Package Body 19.9 20.0 20.1 E Terminal Dimension 15.9 16.0 16.1 E1 Package Body 13.9 14.0 14.1 e Lead Pitch — 0.65 — L Foot Length 0.45 0.60 0.75 L1 Lead Length — 1.00 — Y Coplanarity — — 0.10 θ Lead Angle 0° — 7° L1 c e D D1 Description Pin 1 Symbol θ b A1 A2 E1 Y E Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. BPR 1999.05.18 Rev: 1.02 9/2002 23/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 Ordering Information—GSI NBT Synchronous SRAM Org Part Number1 Type Package Speed2 (MHz/ns) TA3 512K x 18 GS880Z18AT-250 NBT Pipeline/Flow Through TQFP 250/5.5 C 512K x 18 GS880Z18AT-225 NBT Pipeline/Flow Through TQFP 225/6 C 512K x 18 GS880Z18AT-200 NBT Pipeline/Flow Through TQFP 200/6.5 C 512K x 18 GS880Z18AT-166 NBT Pipeline/Flow Through TQFP 166/7 C 512K x 18 GS880Z18AT-150 NBT Pipeline/Flow Through TQFP 150/7.5 C 512K x 18 GS880Z18AT-133 NBT Pipeline/Flow Through TQFP 133/8.5 C 256K x 36 GS880Z36AT-250 NBT Pipeline/Flow Through TQFP 250/5.5 C 256K x 36 GS880Z36AT-225 NBT Pipeline/Flow Through TQFP 225/6 C 256K x 36 GS880Z36AT-200 NBT Pipeline/Flow Through TQFP 200/6.5 C 256K x 36 GS880Z36AT-166 NBT Pipeline/Flow Through TQFP 166/7 C 256K x 36 GS880Z36AT-150 NBT Pipeline/Flow Through TQFP 150/7.5 C 256K x 36 GS880Z36AT-133 NBT Pipeline/Flow Through TQFP 133/8.5 C 512K x 18 GS880Z18AT-250I NBT Pipeline/Flow Through TQFP 250/5.5 I Not Available 512K x 18 GS880Z18AT-225I NBT Pipeline/Flow Through TQFP 225/6 I Not Available 512K x 18 GS880Z18AT-200I NBT Pipeline/Flow Through TQFP 200/6.5 I Not Available 512K x 18 GS880Z18AT-166I NBT Pipeline/Flow Through TQFP 166/7 I 512K x 18 GS880Z18AT-150I NBT Pipeline/Flow Through TQFP 150/7.5 I 512K x 18 GS880Z18AT-133I NBT Pipeline/Flow Through TQFP 133/8.5 I 256K x 36 GS880Z36AT-250I NBT Pipeline/Flow Through TQFP 250/5.5 I Not Available 256K x 36 GS880Z36AT-225I NBT Pipeline/Flow Through TQFP 225/6 I Not Available 256K x 36 GS880Z36AT-200I NBT Pipeline/Flow Through TQFP 200/6.5 I Not Available 256K x 36 GS880Z36AT-166I NBT Pipeline/Flow Through TQFP 166/7 I 256K x 36 GS880Z36AT-150I NBT Pipeline/Flow Through TQFP 150/7.5 I 256K x 36 GS880Z36AT-133I NBT Pipeline/Flow Through TQFP 133/8.5 I Status Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS88Z36150IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.02 9/2002 24/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc. GS880Z18/36AT-250/225/200/166/150/133 9Mb Sync SRAM Data Sheet Revision History DS/DateRev. Code: Old; New Types of Changes Format or Content • Creation of new datasheet 880Z18A_r1 880Z18A_r1; 880Z18A_r1_01 Page;Revisions;Reason Content • Updated FT power numbers • Updated AC Characteristics table • Changed 8Mb references to 9Mb • Updated ZZ recovery time diagram • Updated AC Test Conditions table and removed Output Load 2 diagram 880Z18A_r1_01; 880Z18A_r1_02 Rev: 1.02 9/2002 Content • Removed Preliminary banner • Removed pin locations from pin description table 25/25 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, Giga Semiconductor, Inc.