Inchange Semiconductor Product Specification 2SC1449 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·High frequency amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A IB Base current 1 A PC Collector power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1449 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 40 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50m A 0.7 V VBEsat Base-emitter saturation voltage IC=500mA ;IB=50m A 1.5 V hFE DC current gain IC=300mA ; VCE=2V ICBO Collector cut-off current VCB=35V; IE=0 0.5 μA IEBO Emitter cut-off current VEB=4V; IC=0 0.5 μA COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=100mA ; VCE=5V 55 MHz 2 40 250 Inchange Semiconductor Product Specification 2SC1449 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3