Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ï¹’With TO-220 package ï¹’Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature TO-220 -55~150 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO PARAMETER Collector-base cut-off current Emitter-base cut-off current ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)ceo VEBO Collector-emitter breakdown voltage CONDITIONS VCB=-50V; IE=0 VEB=-5V; IC=0 MIN IC=-10mA;IB=0 -50 Typ MAX -1 -1 UNIT uA uA V Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages IC=-8A; IB=-0.15A -0.2 -0.4 V hFE-1 Forward current transfer ratio IC=-1A; VCE=-1V 70 hFE-2 Forward current transfer ratio IC=-3A; VCE=-1V 30 VBE(sat)1 Base-emitter saturation voltages IC=-8A; IB=-0.15A -0.9 VBE(sat)2 Base-emitter saturation voltages Collector Output Capacitance VCB=-10V; IE=0;f=1MHz 70 pF Transition frepuency IC=-1A; VCE=-4V 60 MHz COB fT 240 -1.2 V