MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-24H ● IC ................................................................... 200A ● VCES ....................................................... 1200V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM TC measured point 108 (7.5) Dimensions in mm (7.5) 93 ±0.25 14 14 E2 G2 14 E2 25 17.5 6 G1 E1 62 48 ±0.25 15 25 CIRCUIT DIAGRAM (7) 8.85 C1 E2 C1 6 E2 G2 G1 E1 CM C2E1 21.5 2.5 3-M6 NUTS 25.7 4-φ6. 5 MOUNTING HOLES 4 18 7 0.5 18 2.8 0.5 0.5 4 22 29 LABEL 0.5 8.5 7 7.5 18 +1.0 –0.5 (18) (8.25) C2E1 Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings Unit 1200 ±20 200 400 200 400 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 V V A A A A W °C °C Vrms N·m N·m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R ICES Rth(c-f) Note 1. 2. 3. 4. 5. 6. VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 20mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 750 — — — — — — 1.1 — — 0.5 3.7 — 30 10.5 6 — 200 300 300 350 3.2 300 — 0.11 0.18 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.04 — K/W Item Contact thermal resistance Test Conditions ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = –400A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 15 VCE = 10V COLLECTOR CURRENT IC (A) 12 Tj = 25°C 300 11 200 10 9 100 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 20 (V) 0 2 4 6 8 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 100 0 200 300 8 6 IC = 400A 4 IC = 200A IC = 80A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 3 2 102 7 5 3 2 101 1.0 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 400 103 EMITTER CURRENT IE (A) 300 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 400 7 5 3 2 VGE = 0V Cies 101 7 5 3 2 Coes 100 7 5 Cres 3 2 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE tf 3 td(off) 2 td(on) 102 7 5 tr Tj = 125°C VCC = 600V VGE = ±15V RG = 1.6Ω 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 1 10 2 3 5 7 102 2 2 5 3 3 2 2 Irr trr 102 101 7 5 7 5 3 3 2 2 2 3 5 7 102 100 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per unit base = Rth(j – c) = 0.11K/W 100 5 101 1 10 5 7 103 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 400A /µs 7 7 Tj = 25°C 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.18K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 15 VCC = 400V VCC = 600V 10 5 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 4